About: Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure     Goto   Sponge   NotDistinct   Permalink

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  • In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1–4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.
  • In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1–4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere. (en)
Title
  • Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure
  • Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure (en)
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  • Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure
  • Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure (en)
skos:notation
  • RIV/68378271:_____/13:00424792!RIV14-MSM-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I, P(LH12150)
http://linked.open...iv/cisloPeriodika
  • 11
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  • 67388
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/13:00424792
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  • Ce:GAGG; scintillator; single crystal; floating zone method; growth atmosphere; combinatorial (en)
http://linked.open.../riv/klicoveSlovo
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  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [364723CA83F5]
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  • Optical Materials
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  • 35
http://linked.open...iv/tvurceVysledku
  • Fujimoto, Y.
  • Kamada, K.
  • Nikl, Martin
  • Pejchal, Jan
  • Sugiyama, M.
  • Yokota, Y.
  • Yoshikawa, A.
  • Yamaji, A.
  • Futami, Y.
  • Kurosawa, S.
  • Wakahara, S.
  • Shishido, T.
  • Yubuta, K.
http://linked.open...ain/vavai/riv/wos
  • 000324962500003
issn
  • 0925-3467
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.optmat.2013.02.021
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