About: Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

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About: Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report on the observation of superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb QW in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at temperatures of 77 and 300 K. It is shown that such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2-3 times in the current range 50-200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ΔEC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Theoretical calculation of the size quantization energy levels is presented, and possible cases of impact ionization are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers) operating in mid-IR spectral range, as well as for photovoltaic elements. We report on the observation of superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb QW in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at temperatures of 77 and 300 K. It is shown that such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2-3 times in the current range 50-200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ΔEC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Theoretical calculation of the size quantization energy levels is presented, and possible cases of impact ionization are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers) operating in mid-IR spectral range, as well as for photovoltaic elements. (en)
Title	Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells (en)
skos:prefLabel	Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells (en)
skos:notation	RIV/68378271:_____/13:00421578!RIV14-GA0-68378271
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GA13-15286S)
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Pangrác, Jiří Hulicius, Eduard Hospodková, Alice Zíková, Markéta
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	72759
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/13:00421578
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	quantum wells; ionization; interfaces; lasers; LED; Mid-IR; quantum efficiency; MOVPE (en)
http://linked.open.../riv/klicoveSlovo	Mid-IR quantum wells ionization interfaces MOVPE LED lasers quantum efficiency
http://linked.open...ontrolniKodProRIV	[FC51112F5C95]
http://linked.open...v/mistoKonaniAkce	Prague
http://linked.open...i/riv/mistoVydani	BELLINGHAM
http://linked.open...i/riv/nazevZdroje	INTEGRATED OPTICS: PHYSICS AND SIMULATIONS ( Proceedings of SPIE 8781)
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	12 (xsd:int)
http://linked.open...vavai/riv/projekt	Nano-heterostruktury s hlubokou kvantovou jámou na bázi GaSb
http://linked.open...UplatneniVysledku	2013
http://linked.open...iv/tvurceVysledku	Hulicius, Eduard Pangrác, Jiří Hospodková, Alice Zíková, Markéta Danilov, L. Ivanov, E. Kalinina, K. Mikhailova, M. Salikhov, Kh. Stoyanov, N. Yakovlev, Yu. Zegrya, G.
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open...ain/vavai/riv/wos	000323312700014
http://linked.open.../riv/zahajeniAkce	2013-04-17 (xsd:date)
issn	0277-786X
number of pages	9 (xsd:int)
http://bibframe.org/vocab/doi	10.1117/12.2017124
http://purl.org/ne...btex#hasPublisher	SPIE
https://schema.org/isbn	978-0-8194-9583-9

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