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  • Superlinear electroluminescence with anomalous temperature dependence was observed on GaSb based structures with AlSb barriers and deep InAsSb quantum well. Reflectance anisotropy spectroscopy was used for in situ growth checking. High energy AlSb barriers should provide electrons with sufficient energy for impact ionization in InAsSb QW. Suggested AlAs like interfaces should improve the hole localization in shallow valence band QW. The electroluminescence results of our deep QW GaSb based structure suggest, that the carrier multiplication effect due to impact ionization may take place at the Al(As)Sb/InAsSb heterointerface. This occurs due to a large band offset at the interface exceeding ionization threshold energy for electrons in the narrow-gap well. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers), as well as for photovoltaic elements.
  • Superlinear electroluminescence with anomalous temperature dependence was observed on GaSb based structures with AlSb barriers and deep InAsSb quantum well. Reflectance anisotropy spectroscopy was used for in situ growth checking. High energy AlSb barriers should provide electrons with sufficient energy for impact ionization in InAsSb QW. Suggested AlAs like interfaces should improve the hole localization in shallow valence band QW. The electroluminescence results of our deep QW GaSb based structure suggest, that the carrier multiplication effect due to impact ionization may take place at the Al(As)Sb/InAsSb heterointerface. This occurs due to a large band offset at the interface exceeding ionization threshold energy for electrons in the narrow-gap well. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers), as well as for photovoltaic elements. (en)
Title
  • Growth of deep InAsSb electron QW with AlSb barriers on GaSb substrate
  • Growth of deep InAsSb electron QW with AlSb barriers on GaSb substrate (en)
skos:prefLabel
  • Growth of deep InAsSb electron QW with AlSb barriers on GaSb substrate
  • Growth of deep InAsSb electron QW with AlSb barriers on GaSb substrate (en)
skos:notation
  • RIV/68378271:_____/13:00399966!RIV14-GA0-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I, P(GA13-15286S)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 76936
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  • RIV/68378271:_____/13:00399966
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  • InAsSb; AlSb; GaSb; impact ionization,; MOVPE (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [E8CA6583EC07]
http://linked.open...v/mistoKonaniAkce
  • Aachen
http://linked.open...i/riv/mistoVydani
  • Jülich
http://linked.open...i/riv/nazevZdroje
  • EWMOVPE XV
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http://linked.open...vavai/riv/projekt
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http://linked.open...iv/tvurceVysledku
  • Hulicius, Eduard
  • Pangrác, Jiří
  • Hospodková, Alice
  • Oswald, Jiří
  • Zíková, Markéta
  • Kalinina, K. V.
  • Mikhailova, M. P.
  • Zegrya, G. G.
  • Ivanov, E.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
issn
  • 1866-1777
number of pages
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  • Forschungszentrum Jülich GmbH
https://schema.org/isbn
  • 978-3-89336-870-9
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