About: Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films     Goto   Sponge   NotDistinct   Permalink

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  • Single crystalline films of Lu2SiO5:Bi,prepared by the liquid phase epitaxy method from the melt-solution based on Bi2O3 flux, are studied at 4.2–350 K by the time-resolved spectroscopy methods under excitation in the 2.4–6.2 eV energy range. An intense dominant ultraviolet luminescence of Lu2SiO5:Bi is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state(RES)of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion,respectively. Characteristic parameters of the triplet RES,in particular the energy separation between the excited states and the rates of the radiative and non-radiative transitions from these states, are determined.
  • Single crystalline films of Lu2SiO5:Bi,prepared by the liquid phase epitaxy method from the melt-solution based on Bi2O3 flux, are studied at 4.2–350 K by the time-resolved spectroscopy methods under excitation in the 2.4–6.2 eV energy range. An intense dominant ultraviolet luminescence of Lu2SiO5:Bi is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state(RES)of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion,respectively. Characteristic parameters of the triplet RES,in particular the energy separation between the excited states and the rates of the radiative and non-radiative transitions from these states, are determined. (en)
Title
  • Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films
  • Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films (en)
skos:prefLabel
  • Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films
  • Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films (en)
skos:notation
  • RIV/68378271:_____/13:00396559!RIV14-GA0-68378271
http://linked.open...avai/riv/aktivita
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  • I, P(GAP204/12/0805)
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  • Feb
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  • 96102
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  • RIV/68378271:_____/13:00396559
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  • Bi3+-doped oxyorthosilicate; time-resolved spectroscopy; luminescence; scintillation materials (en)
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  • NL - Nizozemsko
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  • [4C04EA4C7317]
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  • Journal of Luminescence
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  • 134
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  • Mihóková, Eva
  • Nikl, Martin
  • Gorbenko, V.
  • Zorenko, Y.
  • Zazubovich, S.
  • Krasnikov, A.
http://linked.open...ain/vavai/riv/wos
  • 000313393300076
issn
  • 0022-2313
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.jlumin.2012.07.043
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