About: Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films     Goto   Sponge   NotDistinct   Permalink

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  • Single crystallinefilms of Bi-doped Y2SiO5 are studied at 4.2-350 K by the time-resolved luminescence methods under excitation in the 3.8-6.2 eV energy range. Ultraviolet luminescence of Y2SiO5:Bi (3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion, respectively. The lowest-energy excitation band of this emission, located at 4.5 eV, is assigned to the 1S0 3P1 transitions of a free Bi3+ ion. The phenomenological model is proposed to describe the excitedstate dynamics of Bi3+ centers in Y2SiO5:Bi, and parameters of the triplet RES are determined.
  • Single crystallinefilms of Bi-doped Y2SiO5 are studied at 4.2-350 K by the time-resolved luminescence methods under excitation in the 3.8-6.2 eV energy range. Ultraviolet luminescence of Y2SiO5:Bi (3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion, respectively. The lowest-energy excitation band of this emission, located at 4.5 eV, is assigned to the 1S0 3P1 transitions of a free Bi3+ ion. The phenomenological model is proposed to describe the excitedstate dynamics of Bi3+ centers in Y2SiO5:Bi, and parameters of the triplet RES are determined. (en)
Title
  • Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films
  • Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films (en)
skos:prefLabel
  • Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films
  • Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films (en)
skos:notation
  • RIV/68378271:_____/13:00396533!RIV14-GA0-68378271
http://linked.open...avai/riv/aktivita
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  • I, P(GAP204/12/0805)
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  • Sept
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  • 96101
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  • RIV/68378271:_____/13:00396533
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  • luminescence; Bi3+-doped oxyorthosilicates; single crystalline films (en)
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  • GB - Spojené království Velké Británie a Severního Irska
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  • [45595B468579]
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  • Radiation Measurements
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  • 56
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  • Mihóková, Eva
  • Nikl, Martin
  • Gorbenko, V.
  • Zorenko, Y.
  • Zazubovich, S.
  • Babin, Vladimir
  • Krasnikov, A.
http://linked.open...ain/vavai/riv/wos
  • 000325671400021
issn
  • 1350-4487
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.radmeas.2013.04.001
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