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  • Current–voltage characteristics of surface barrier diodes based on SI–GaAs are measured for different metal combinations used for top and bottom contacts. Up to two orders of magnitude current reduction is observed for the structures involving Mg metallization with respect to those without Mg. The strong blocking ability of the Mg contact is attributed to the downwards band-bending, formation of a quasi-degenerate interface region accumulating charge carriers, and the corresponding lowering of the bulk SI–GaAs free carrier concentration.
  • Current–voltage characteristics of surface barrier diodes based on SI–GaAs are measured for different metal combinations used for top and bottom contacts. Up to two orders of magnitude current reduction is observed for the structures involving Mg metallization with respect to those without Mg. The strong blocking ability of the Mg contact is attributed to the downwards band-bending, formation of a quasi-degenerate interface region accumulating charge carriers, and the corresponding lowering of the bulk SI–GaAs free carrier concentration. (en)
Title
  • Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs
  • Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs (en)
skos:prefLabel
  • Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs
  • Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs (en)
skos:notation
  • RIV/68378271:_____/13:00391737!RIV14-AV0-68378271
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  • I, P(ED2.1.00/03.0058), P(EE2.3.30.0004)
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  • 112589
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  • RIV/68378271:_____/13:00391737
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  • Schottky barrier; low-bias transport; semi-insulating GaAs; low work-function; high resistence; low leakage current; blocking contact (en)
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  • GB - Spojené království Velké Británie a Severního Irska
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  • [03E82F424B5C]
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  • Solid-State Electronics
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  • 82
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  • Hubík, Pavel
  • Kindl, Dobroslav
  • Dubecký, M.
  • Baldini, M.
  • Dubecký, F.
  • Gombia, E.
  • Nečas, V.
http://linked.open...ain/vavai/riv/wos
  • 000317701500015
issn
  • 0038-1101
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.sse.2013.01.021
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