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  • We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x) As layers
  • We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x) As layers (en)
Title
  • Strain accommodation within porous buffer layers in heteroepitaxial growth
  • Strain accommodation within porous buffer layers in heteroepitaxial growth (en)
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  • Strain accommodation within porous buffer layers in heteroepitaxial growth
  • Strain accommodation within porous buffer layers in heteroepitaxial growth (en)
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  • RIV/68378271:_____/12:00396817!RIV14-MSM-68378271
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  • I, P(7AMB12GR034), P(GAP108/10/0253)
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  • 171514
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  • RIV/68378271:_____/12:00396817
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  • Epitaxial growth; Gaas; Porous substrates (en)
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  • [FF1466B8DE16]
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  • Smolenice Castle
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  • New York
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  • ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems
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  • Gladkov, Petr
  • Grym, Jan
  • Hulicius, Eduard
  • Nohavica, Dušan
  • Pangrác, Jiří
  • Pacherová, Oliva
  • Piksová, K.
  • Vaniš, Jan
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  • 000316566500056
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number of pages
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  • 10.1109/ASDAM.2012.6418524
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  • IEEE
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  • 978-1-4673-1197-7
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