About: Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe     Goto   Sponge   NotDistinct   Permalink

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  • We present a detailed study of the below band-gap optical absorption at room temperature in bulk semi-insulating GaN:Fe versus the Fe-doping. It was established that the 1.24 eV photoluminescence band at 300 K consists of only vibrational replicas of the Fe3+ 4T1(G) 6A1(S) internal transition. We also studied the below band-gap photoluminescence excitation of the 1.24 eV band. The identical exponential rise of the photoluminescence excitation and the optical absorption coefficient identify the Fe3+/2+ charge-transfer as the main contributor to the 300 K optical absorption in the range 400-500 nm. Practical implications of these results for Fe-doping determination are discussed.
  • We present a detailed study of the below band-gap optical absorption at room temperature in bulk semi-insulating GaN:Fe versus the Fe-doping. It was established that the 1.24 eV photoluminescence band at 300 K consists of only vibrational replicas of the Fe3+ 4T1(G) 6A1(S) internal transition. We also studied the below band-gap photoluminescence excitation of the 1.24 eV band. The identical exponential rise of the photoluminescence excitation and the optical absorption coefficient identify the Fe3+/2+ charge-transfer as the main contributor to the 300 K optical absorption in the range 400-500 nm. Practical implications of these results for Fe-doping determination are discussed. (en)
Title
  • Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
  • Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe (en)
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  • Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
  • Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe (en)
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  • RIV/68378271:_____/12:00395942!RIV14-AV0-68378271
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  • 124681
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  • RIV/68378271:_____/12:00395942
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  • GaN; spectroscopy; optical absorption (en)
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  • US - Spojené státy americké
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  • Applied Physics Letters
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  • 100
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  • Gladkov, Petr
  • Hulicius, Eduard
  • Paskova, T.
  • Evans, K. R.
  • Preble, E.
http://linked.open...ain/vavai/riv/wos
  • 000299386800022
issn
  • 0003-6951
number of pages
http://bibframe.org/vocab/doi
  • 10.1063/1.3678195
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