About: Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this paper, torsional resonance tunneling mode atomic force microscopy is used to study the conductivity of nanoparticles. SnS nanoparticles capped with trioctylphosphine oxide (TOPO) and with In2S3 shell are analyzed. This contactless technique allows carrying out measurements on nanoparticles without destroying them and to obtain simultaneously topography and conductivity maps. This made it possible to achieve complete characterization of individual particles in a single measurement. The results demonstrate that the particles have conductive properties. The results have also showed that the TOPO capping layer may hinder tunneling currents, therefore should be avoided when performing these measurements. In this paper, torsional resonance tunneling mode atomic force microscopy is used to study the conductivity of nanoparticles. SnS nanoparticles capped with trioctylphosphine oxide (TOPO) and with In2S3 shell are analyzed. This contactless technique allows carrying out measurements on nanoparticles without destroying them and to obtain simultaneously topography and conductivity maps. This made it possible to achieve complete characterization of individual particles in a single measurement. The results demonstrate that the particles have conductive properties. The results have also showed that the TOPO capping layer may hinder tunneling currents, therefore should be avoided when performing these measurements. (en)
Title	Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy (en)
skos:prefLabel	Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy (en)
skos:notation	RIV/68378271:_____/12:00389173!RIV13-AV0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(7E10061), P(LM2011026), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Fejfar, Antonín Vetushka, Aliaksi
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	128431
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/12:00389173
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	atomic force microscopy; nanoparticles; tin compounds; tunnelling (en)
http://linked.open.../riv/klicoveSlovo	nanoparticles atomic force microscopy tin compounds tunnelling
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[5513A9F80585]
http://linked.open...i/riv/nazevZdroje	Applied Physics Letters
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Zlepšené fotovoltaické moduly založené na polykrystalickém křemíku na skle (Improved Polycrystalline-Silicon Modules on Glass Substrates) Laboratory of nanstructures and nanomaterials
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	101
http://linked.open...iv/tvurceVysledku	Fejfar, Antonín Vetushka, Aliaksi Nanu, D. Nanu, M. Prastani, C. Rath, J. K. Schropp, R. E. I.
http://linked.open...ain/vavai/riv/wos	000308420800078
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0003-6951
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1063/1.4744601

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