About: Study on the luminescence and energy level of lanthanide ions in Lu0.8 Sc0.2BO3 host

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Emission and excitation spectra of undoped and Ln(3+) (Ln = Ce, Pr, Nd, Yb)-doped Lu0.8Sc0.2BO3 were studied by vacuum ultraviolet spectroscopy, and the X-ray excited luminescence spectra were measured as well at room temperature. The undoped specimen presented two different emissions upon excitation at energies in the vicinity of the band gap or with X-ray. The emission at the highest energy side, located at 4.77 eV, was ascribed to self-trapped exciton, which is anchored by electron capture around the Sc site. We also observed three broad emission bands at 4.43, 3.02, and 2.10 eV, which might be attributed to the trapped exciton, defect - related emissions, or both. Energy transfer processes to the doped lanthanide ions in Lu0.8Sc0.2BO3 via exciton state or sequential electron-hole capture are discussed. Finally, the energy level diagram for divalent and trivalent lanthanides in Lu0.8Sc0.2BO3 was constructed using the obtained spectroscopic parameters and the three parameters method (Dorenbos, P. J. Phys.: Condens. Matter 2003, 15, 8417). Emission and excitation spectra of undoped and Ln(3+) (Ln = Ce, Pr, Nd, Yb)-doped Lu0.8Sc0.2BO3 were studied by vacuum ultraviolet spectroscopy, and the X-ray excited luminescence spectra were measured as well at room temperature. The undoped specimen presented two different emissions upon excitation at energies in the vicinity of the band gap or with X-ray. The emission at the highest energy side, located at 4.77 eV, was ascribed to self-trapped exciton, which is anchored by electron capture around the Sc site. We also observed three broad emission bands at 4.43, 3.02, and 2.10 eV, which might be attributed to the trapped exciton, defect - related emissions, or both. Energy transfer processes to the doped lanthanide ions in Lu0.8Sc0.2BO3 via exciton state or sequential electron-hole capture are discussed. Finally, the energy level diagram for divalent and trivalent lanthanides in Lu0.8Sc0.2BO3 was constructed using the obtained spectroscopic parameters and the three parameters method (Dorenbos, P. J. Phys.: Condens. Matter 2003, 15, 8417). (en)
Title	Study on the luminescence and energy level of lanthanide ions in Lu0.8 Sc0.2BO3 host Study on the luminescence and energy level of lanthanide ions in Lu0.8 Sc0.2BO3 host (en)
skos:prefLabel	Study on the luminescence and energy level of lanthanide ions in Lu0.8 Sc0.2BO3 host Study on the luminescence and energy level of lanthanide ions in Lu0.8 Sc0.2BO3 host (en)
skos:notation	RIV/68378271:_____/11:00437606!RIV15-AV0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(ME10084), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	47
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Nikl, Martin
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	233176
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00437606
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	scintillation properties; single-crystal; systematic behavior (en)
http://linked.open.../riv/klicoveSlovo	scintillation properties single-crystal systematic behavior
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[91FDCD938320]
http://linked.open...i/riv/nazevZdroje	Journal of Physical Chemistry A
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Performance and defect characterization in the advanced single crystal scintillation materials
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	115
http://linked.open...iv/tvurceVysledku	Nikl, Martin Wang, J. Ren, G. Wu, Y. Ding, D. Pan, S. Yang, F. Shang, S.
http://linked.open...ain/vavai/riv/wos	000297195300011
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	1089-5639
number of pages	8 (xsd:int)
http://bibframe.org/vocab/doi	10.1021/jp209017w

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