About: CuIn1xAlxS2 thin films prepared by sulfurization of metallic precursors

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	CuIn1xAlxS2 thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu–In–Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS2 to {a = 5.30 Å, c = 10.36 Å} for CuAlS2. No unwanted phases such as Cu2xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A1 phonon frequency varied nonlinearly from 294 cm1 (CuInS2) to 314 cm1 (CuAlS2). CuIn1xAlxS2 thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu–In–Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS2 to {a = 5.30 Å, c = 10.36 Å} for CuAlS2. No unwanted phases such as Cu2xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A1 phonon frequency varied nonlinearly from 294 cm1 (CuInS2) to 314 cm1 (CuAlS2). (en)
Title	CuIn1xAlxS2 thin films prepared by sulfurization of metallic precursors CuIn1xAlxS2 thin films prepared by sulfurization of metallic precursors (en)
skos:prefLabel	CuIn1xAlxS2 thin films prepared by sulfurization of metallic precursors CuIn1xAlxS2 thin films prepared by sulfurization of metallic precursors (en)
skos:notation	RIV/68378271:_____/11:00375572!RIV12-AV0-68378271
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z10100522)
http://linked.open...iv/cisloPeriodika	41
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Olejníček, Jiří Kment, Štěpán
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	192448
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00375572
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	CuIn1xAlxS2; CIAS; chalcopyrites; Raman spectroscopy; solar cells (en)
http://linked.open.../riv/klicoveSlovo	CIAS CuIn1xAlxS2 Raman spectroscopy chalcopyrites solar cells
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[77C91A8AA7AC]
http://linked.open...i/riv/nazevZdroje	Journal of Alloys and Compounds
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	509
http://linked.open...iv/tvurceVysledku	Darveau, S. A. Exstrom, C. L. Flannery, L. E. Ianno, N. J. Kment, Štěpán Olejníček, Jiří Soukup, R. J.
http://linked.open...ain/vavai/riv/wos	000295978500050
http://linked.open...n/vavai/riv/zamer	Wave and Corpuscular Light Propagation, Optical Materials and Technology
issn	0925-8388
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.jallcom.2011.08.016

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