About: Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Lu3Al5O12 (LuAG) films were grown from the BaO–B2O3–BaF2 flux on LuAG and YAG substrates using the liquid phase epitaxy method (LPE). They were doped with Pr3+, Sc3+, and eventually still with Ce3+ ions. Photoelectron yield, its time dependence, and energy resolution were measured under α-particle excitation. A sample of the Czochralski-grown bulk LuAG:Pr single crystal was measured as a reference. The best performing epitaxial films had low Sc3+ concentration and appeared comparable or superior to the Czochralski-grown crystal in terms of photoelectron yield and relative intensity of the fast component of scintillation response. Lu3Al5O12 (LuAG) films were grown from the BaO–B2O3–BaF2 flux on LuAG and YAG substrates using the liquid phase epitaxy method (LPE). They were doped with Pr3+, Sc3+, and eventually still with Ce3+ ions. Photoelectron yield, its time dependence, and energy resolution were measured under α-particle excitation. A sample of the Czochralski-grown bulk LuAG:Pr single crystal was measured as a reference. The best performing epitaxial films had low Sc3+ concentration and appeared comparable or superior to the Czochralski-grown crystal in terms of photoelectron yield and relative intensity of the fast component of scintillation response. (en)
Title	Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films (en)
skos:prefLabel	Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films (en)
skos:notation	RIV/68378271:_____/11:00371190!RIV12-AV0-68378271
http://linked.open...avai/riv/aktivita	P S Z
http://linked.open...avai/riv/aktivity	P(GA202/08/0893), S, Z(AV0Z10100521), Z(MSM0021620834), Z(MSM6840770040)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Nitsch, Karel Nikl, Martin Průša, Petr Mareš, Jiří A.
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	228315
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00371190
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	energy resolution; photoelectron yield; LuAG:Pr; Sc codoped material; scintillator materials (en)
http://linked.open.../riv/klicoveSlovo	LuAG:Pr Sc codoped material energy resolution photoelectron yield scintillator materials
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[EC7D26DED0C4]
http://linked.open...i/riv/nazevZdroje	Journal of Crystal Growth
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Novel materials and technologies for thick film scintillators
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	318
http://linked.open...iv/tvurceVysledku	Mareš, Jiří A. Nikl, Martin Nitsch, Karel Průša, Petr Hanuš, M. Kučera, M. Onderišinová, Z. Čechák, T.
http://linked.open...ain/vavai/riv/wos	000289653900115
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films Condensed Matter Physics – New Materials and Technologies Application of radionuclides and ionising radiation
issn	0022-0248
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.jcrysgro.2010.10.046

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