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rdf:type
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Description
| - Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (3x3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7x7) which produces islands. The growth is characterized by atomic force microscopy, electron and x-ray diffraction. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed.
- Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (3x3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7x7) which produces islands. The growth is characterized by atomic force microscopy, electron and x-ray diffraction. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed. (en)
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Title
| - Interface engineering for improved growth of GaSb on Si(111)
- Interface engineering for improved growth of GaSb on Si(111) (en)
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skos:prefLabel
| - Interface engineering for improved growth of GaSb on Si(111)
- Interface engineering for improved growth of GaSb on Si(111) (en)
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skos:notation
| - RIV/68378271:_____/11:00370546!RIV12-AV0-68378271
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/11:00370546
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - defects; RHEED; XRD; MBE; antimonides; III-V semiconductors (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Crystal Growth
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Braun, W.
- Grosse, F.
- Proessdorf, A.
- Riechert, H.
- Romanyuk, Olexandr
- Jenichen, B.
- Trampert, A.
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1016/j.jcrysgro.2010.11.167
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