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  • Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (3x3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7x7) which produces islands. The growth is characterized by atomic force microscopy, electron and x-ray diffraction. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed.
  • Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (3x3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7x7) which produces islands. The growth is characterized by atomic force microscopy, electron and x-ray diffraction. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed. (en)
Title
  • Interface engineering for improved growth of GaSb on Si(111)
  • Interface engineering for improved growth of GaSb on Si(111) (en)
skos:prefLabel
  • Interface engineering for improved growth of GaSb on Si(111)
  • Interface engineering for improved growth of GaSb on Si(111) (en)
skos:notation
  • RIV/68378271:_____/11:00370546!RIV12-AV0-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika
  • 1
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
  • Romanyuk, Olexandr
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 205329
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/11:00370546
http://linked.open...riv/jazykVysledku
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  • defects; RHEED; XRD; MBE; antimonides; III-V semiconductors (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [1C5127903F99]
http://linked.open...i/riv/nazevZdroje
  • Journal of Crystal Growth
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 213
http://linked.open...iv/tvurceVysledku
  • Braun, W.
  • Grosse, F.
  • Proessdorf, A.
  • Riechert, H.
  • Romanyuk, Olexandr
  • Jenichen, B.
  • Trampert, A.
http://linked.open...ain/vavai/riv/wos
  • 000292175000101
http://linked.open...n/vavai/riv/zamer
issn
  • 0022-0248
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.jcrysgro.2010.11.167
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