About: Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping

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About: Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We employ a combination of first-principles calculations and optical characterization experiments to explain the mechanism by which Ga3+ doping prevents the trapping of free carriers due to shallow traps in RE3Al5O12 garnet scintillators (where RE represents a 3+ rare-earth cation). Specifically, we confirm that Ga3+ doping does not reduce the defect concentration (defect engineering), but rather leads to shifts in the valence and conduction bands such that the energy level of shallow defects is no longer in the forbidden gap where electrons can be trapped (band-gap engineering). We employ a combination of first-principles calculations and optical characterization experiments to explain the mechanism by which Ga3+ doping prevents the trapping of free carriers due to shallow traps in RE3Al5O12 garnet scintillators (where RE represents a 3+ rare-earth cation). Specifically, we confirm that Ga3+ doping does not reduce the defect concentration (defect engineering), but rather leads to shifts in the valence and conduction bands such that the energy level of shallow defects is no longer in the forbidden gap where electrons can be trapped (band-gap engineering). (en)
Title	Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping (en)
skos:prefLabel	Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping (en)
skos:notation	RIV/68378271:_____/11:00370478!RIV12-AV0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/08/0893), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Nikl, Martin
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	187801
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00370478
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	garnet; scintillator; first principle calculation; thermoluminescence; antisite defect (en)
http://linked.open.../riv/klicoveSlovo	antisite defect first principle calculation thermoluminescence garnet scintillator
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[1071D616678E]
http://linked.open...i/riv/nazevZdroje	Physical Review. B
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Novel materials and technologies for thick film scintillators
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	84
http://linked.open...iv/tvurceVysledku	Andersson, D. A. Fasoli, M. Jiang, C. McClellan, K. J. Nikl, Martin Stanek, C. R. Uberuaga, B. P. Vedda, A.
http://linked.open...ain/vavai/riv/wos	000294325400001
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	1098-0121
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1103/PhysRevB.84.081102

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