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Description
| - We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 11015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm9.75 cm large-area sensor and several 1 cm1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage.
- We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 11015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm9.75 cm large-area sensor and several 1 cm1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. (en)
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Title
| - Development of n-on-p silicon sensors for very high radiation environments
- Development of n-on-p silicon sensors for very high radiation environments (en)
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skos:prefLabel
| - Development of n-on-p silicon sensors for very high radiation environments
- Development of n-on-p silicon sensors for very high radiation environments (en)
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skos:notation
| - RIV/68378271:_____/11:00361396!RIV13-AV0-68378271
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(LA08032), Z(AV0Z10100502), Z(MSM0021620859)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/11:00361396
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - silicon; micro-strip; ATLAS; SLHC; sensor; radiation damage; p-type; n-in-p (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Nuclear Instruments & Methods in Physics Research Section A
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Böhm, Jan
- Bates, R.
- Mikeštíková, Marcela
- Affolder, A. A.
- Allport, P. P.
- Betancourt, C.
- Brown, H.
- Buttar, C.
- Carter, J. R.
- Casse, G.
- Unno, Y.
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1016/j.nima.2010.04.080
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