About: Mechanical and tribological properties of coatings sputtered from SiC target in the presence of CH4 gas     Goto   Sponge   NotDistinct   Permalink

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  • In the present work the amorphous hydrogenated silicon-carbide (a-SiC:H) films with different C/Si ratio were prepared at room temperature using DC magnetron sputtering in two ways: (i) sputtering of silicon target; (ii) sputtering of SiC target, both in the gas mixture of Ar and CH4. In the latter case the films contained less hydrogen at the same C/Si ratio. The mechanical and tribological properties of these films were studied to find their optimum combination. The hardness, elastic modulus (nanoindentation), intrinsic stress (Stoney's formula) and coefficient of friction (pin on disc tribometer) were examined in dependence on the technological parameters, film structure and composition (Raman spectra, electron probe microanalysis).
  • In the present work the amorphous hydrogenated silicon-carbide (a-SiC:H) films with different C/Si ratio were prepared at room temperature using DC magnetron sputtering in two ways: (i) sputtering of silicon target; (ii) sputtering of SiC target, both in the gas mixture of Ar and CH4. In the latter case the films contained less hydrogen at the same C/Si ratio. The mechanical and tribological properties of these films were studied to find their optimum combination. The hardness, elastic modulus (nanoindentation), intrinsic stress (Stoney's formula) and coefficient of friction (pin on disc tribometer) were examined in dependence on the technological parameters, film structure and composition (Raman spectra, electron probe microanalysis). (en)
Title
  • Mechanical and tribological properties of coatings sputtered from SiC target in the presence of CH4 gas
  • Mechanical and tribological properties of coatings sputtered from SiC target in the presence of CH4 gas (en)
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  • Mechanical and tribological properties of coatings sputtered from SiC target in the presence of CH4 gas
  • Mechanical and tribological properties of coatings sputtered from SiC target in the presence of CH4 gas (en)
skos:notation
  • RIV/68378271:_____/11:00359397!RIV12-AV0-68378271
http://linked.open...avai/riv/aktivita
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  • N, P(1M06002), P(KAN301370701), Z(AV0Z10100522)
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  • 11
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  • 211219
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  • RIV/68378271:_____/11:00359397
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  • amorphous SiC films; sputtering; hardness; coefficient of friction; Raman spectra (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV
  • [08B07F7EA0BA]
http://linked.open...i/riv/nazevZdroje
  • Surface and Coatings Technology
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  • 205
http://linked.open...iv/tvurceVysledku
  • Jastrabík, Lubomír
  • Boháč, Petr
  • Kulykovskyy, Valeriy
  • Vorlíček, Vladimír
  • Čtvrtlík, Radim
  • Bláhová, O.
  • Suchánek, J.
http://linked.open...ain/vavai/riv/wos
  • 000287906900005
http://linked.open...n/vavai/riv/zamer
issn
  • 0257-8972
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.surfcoat.2010.11.057
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