About: Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering     Goto   Sponge   NotDistinct   Permalink

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  • The paper reports on thermal stability of alumina thin films containing gamma-Al2O3 phase and its conversion to a thermodynamically stable alpha-Al2O3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 degrees C to 1150 degrees C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline gamma-Al2O3 phase in the films is thermally stable up to 1000 degrees C even after 5 h of annealing, (2) the nanocrystalline theta-Al2O3 phase was observed in a narrow time and temperature region at >= 1050 degrees C, and (3) annealing at 1100 degrees C for 2 h resulted in a dominance of the alpha-Al2O3 phase only in the films with a sufficient thickness.
  • The paper reports on thermal stability of alumina thin films containing gamma-Al2O3 phase and its conversion to a thermodynamically stable alpha-Al2O3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 degrees C to 1150 degrees C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline gamma-Al2O3 phase in the films is thermally stable up to 1000 degrees C even after 5 h of annealing, (2) the nanocrystalline theta-Al2O3 phase was observed in a narrow time and temperature region at >= 1050 degrees C, and (3) annealing at 1100 degrees C for 2 h resulted in a dominance of the alpha-Al2O3 phase only in the films with a sufficient thickness. (en)
Title
  • Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering
  • Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering (en)
skos:prefLabel
  • Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering
  • Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering (en)
skos:notation
  • RIV/68378271:_____/10:00438332!RIV15-AV0-68378271
http://linked.open...avai/riv/aktivita
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  • Z(AV0Z10100520), Z(MSM4977751302)
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  • 3
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  • 292741
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  • RIV/68378271:_____/10:00438332
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  • Al2O3 (alumina); annealing; thermal stability; nanocrystalline material; sputtering (en)
http://linked.open.../riv/klicoveSlovo
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  • NL - Nizozemsko
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  • [8710DF53306A]
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  • Applied Surface Science
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  • 257
http://linked.open...iv/tvurceVysledku
  • Musil, Jindřich
  • Blažek, J.
  • Prokšová, Š.
  • Čerstvý, R.
  • Zeman, P.
  • Šašek, M.
http://linked.open...ain/vavai/riv/wos
  • 000281941900068
http://linked.open...n/vavai/riv/zamer
issn
  • 0169-4332
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.apsusc.2010.07.107
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