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Description
| - The paper reports on thermal stability of alumina thin films containing gamma-Al2O3 phase and its conversion to a thermodynamically stable alpha-Al2O3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 degrees C to 1150 degrees C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline gamma-Al2O3 phase in the films is thermally stable up to 1000 degrees C even after 5 h of annealing, (2) the nanocrystalline theta-Al2O3 phase was observed in a narrow time and temperature region at >= 1050 degrees C, and (3) annealing at 1100 degrees C for 2 h resulted in a dominance of the alpha-Al2O3 phase only in the films with a sufficient thickness.
- The paper reports on thermal stability of alumina thin films containing gamma-Al2O3 phase and its conversion to a thermodynamically stable alpha-Al2O3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 degrees C to 1150 degrees C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline gamma-Al2O3 phase in the films is thermally stable up to 1000 degrees C even after 5 h of annealing, (2) the nanocrystalline theta-Al2O3 phase was observed in a narrow time and temperature region at >= 1050 degrees C, and (3) annealing at 1100 degrees C for 2 h resulted in a dominance of the alpha-Al2O3 phase only in the films with a sufficient thickness. (en)
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Title
| - Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering
- Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering (en)
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skos:prefLabel
| - Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering
- Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering (en)
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skos:notation
| - RIV/68378271:_____/10:00438332!RIV15-AV0-68378271
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - Z(AV0Z10100520), Z(MSM4977751302)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/10:00438332
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Al2O3 (alumina); annealing; thermal stability; nanocrystalline material; sputtering (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Musil, Jindřich
- Blažek, J.
- Prokšová, Š.
- Čerstvý, R.
- Zeman, P.
- Šašek, M.
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1016/j.apsusc.2010.07.107
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