About: Comment on %22Current routes in hydrogenated microcrystalline silicon%22

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We show that local currents observed by the conductive atomic force microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of local anodic oxidation. The tip-induced oxidation changes character of the local current maps, either in repeated scans or even in the first scan of a pristine surface. In particular, the preoxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings, previously interpreted as an evidence of the main transport route at the grain boundaries in microcrystalline silicon. We also show that stripping of the surface oxide by HF etch restores the local currents to the values corresponding to C-AFM done in ultra-high-vacuum on in situ deposited samples. We show that local currents observed by the conductive atomic force microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of local anodic oxidation. The tip-induced oxidation changes character of the local current maps, either in repeated scans or even in the first scan of a pristine surface. In particular, the preoxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings, previously interpreted as an evidence of the main transport route at the grain boundaries in microcrystalline silicon. We also show that stripping of the surface oxide by HF etch restores the local currents to the values corresponding to C-AFM done in ultra-high-vacuum on in situ deposited samples. (en)
Title	Comment on %22Current routes in hydrogenated microcrystalline silicon%22 Comment on %22Current routes in hydrogenated microcrystalline silicon%22 (en)
skos:prefLabel	Comment on %22Current routes in hydrogenated microcrystalline silicon%22 Comment on %22Current routes in hydrogenated microcrystalline silicon%22 (en)
skos:notation	RIV/68378271:_____/10:00355032!RIV11-MSM-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(IAA100100902), P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	23
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Fejfar, Antonín Ledinský, Martin Stuchlík, Jiří Rezek, Bohuslav Vetushka, Aliaksi Kočka, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	251247
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/10:00355032
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	conductive atomic force microscopy; oxidation; microcrystalline silicon (en)
http://linked.open.../riv/klicoveSlovo	microcrystalline silicon oxidation conductive atomic force microscopy
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[EB10659A2172]
http://linked.open...i/riv/nazevZdroje	Physical Review. B
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Functional hybrid nanosystems of semiconductors and metals with organic materials (FUNS) Structures for Nanophotonics and Nanoelectronics Study of ultrafast photoconductivity and charge transport in thin semiconducting layers using terahertz spectroscopy
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	81
http://linked.open...iv/tvurceVysledku	Rezek, Bohuslav Ledinský, Martin Fejfar, Antonín Stuchlík, Jiří Kočka, Jan Vetushka, Aliaksi
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	1098-0121
number of pages	4 (xsd:int)

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