About: Raman mapping of microcrystalline silicon thin films with high spatial resolution

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Raman mapping of microcrystalline silicon thin films with high spatial resolution Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Raman maps, i.e., grids of individual spectra of Raman scattering from excitation laser beam focused by optical microscope, were used to characterize mixed phase silicon thin films. Raman maps measured with 442 nm and 785 nm lasers were compared with topography or local current maps recorded by conductive atomic force microscope (C-AFM) in the same field of view. The Raman measurement may irreversibly influence the thin film surface by thermal oxidation, as proved by the change of local conductivity observed in C-AFM. Resolution limit of individual grains in Raman mapping with 442 nm excitation was 350 nm, however, we were able to detect much smaller individual grains (down to 160 nm diameter measured by AFM) if they were isolated in amorphous matrix. Polarized Raman spectroscopy is able to detect the crystallographic orientation of the single microcrystalline grain. Resolution of the Raman mapping may be significantly improved by tip enhanced Raman measurement. Raman maps, i.e., grids of individual spectra of Raman scattering from excitation laser beam focused by optical microscope, were used to characterize mixed phase silicon thin films. Raman maps measured with 442 nm and 785 nm lasers were compared with topography or local current maps recorded by conductive atomic force microscope (C-AFM) in the same field of view. The Raman measurement may irreversibly influence the thin film surface by thermal oxidation, as proved by the change of local conductivity observed in C-AFM. Resolution limit of individual grains in Raman mapping with 442 nm excitation was 350 nm, however, we were able to detect much smaller individual grains (down to 160 nm diameter measured by AFM) if they were isolated in amorphous matrix. Polarized Raman spectroscopy is able to detect the crystallographic orientation of the single microcrystalline grain. Resolution of the Raman mapping may be significantly improved by tip enhanced Raman measurement. (en)
Title	Raman mapping of microcrystalline silicon thin films with high spatial resolution Raman mapping of microcrystalline silicon thin films with high spatial resolution (en)
skos:prefLabel	Raman mapping of microcrystalline silicon thin films with high spatial resolution Raman mapping of microcrystalline silicon thin films with high spatial resolution (en)
skos:notation	RIV/68378271:_____/10:00347763!RIV11-MSM-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(IAA100100902), P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	3-4
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Fejfar, Antonín Ledinský, Martin Stuchlík, Jiří Vetushka, Aliaksi Kočka, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	283828
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/10:00347763
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Raman; atomic force microscopy; microcrystalline silicon (en)
http://linked.open.../riv/klicoveSlovo	Raman microcrystalline silicon atomic force microscopy
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[F989FF41A2AB]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi C: Current Topics in Solid State Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Functional hybrid nanosystems of semiconductors and metals with organic materials (FUNS) Structures for Nanophotonics and Nanoelectronics Study of ultrafast photoconductivity and charge transport in thin semiconducting layers using terahertz spectroscopy
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	7
http://linked.open...iv/tvurceVysledku	Ledinský, Martin Fejfar, Antonín Stuchlík, Jiří Kočka, Jan Vetushka, Aliaksi
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	1862-6351
number of pages	4 (xsd:int)

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 58 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software