About: Deep defects in GaN/AlGaN/SiC hererostructures

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Deep level transient spectroscopy (DLTS) measurements were carried out on GaN/AlGaN/SiC heterostructures prepared by MOVPE. The deep level parameters were correlated with the SiC substrate orientation and the AlGaN layer composition. Deep level transient spectroscopy (DLTS) measurements were carried out on GaN/AlGaN/SiC heterostructures prepared by MOVPE. The deep level parameters were correlated with the SiC substrate orientation and the AlGaN layer composition. (en)
Title	Deep defects in GaN/AlGaN/SiC hererostructures Deep defects in GaN/AlGaN/SiC hererostructures (en)
skos:prefLabel	Deep defects in GaN/AlGaN/SiC hererostructures Deep defects in GaN/AlGaN/SiC hererostructures (en)
skos:notation	RIV/68378271:_____/09:00328675!RIV10-AV0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/07/0525), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	9
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Mareš, Jiří J. Výborný, Zdeněk Hubík, Pavel Krištofik, Jozef Kindl, Dobroslav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	309235
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/09:00328675
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	nitrides; silicon carbide; deep levels; DLTS (en)
http://linked.open.../riv/klicoveSlovo	silicon carbide DLTS deep levels nitrides
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[9149ABFF4890]
http://linked.open...i/riv/nazevZdroje	Journal of Applied Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Deep defects in semiconductors for optoelectronic applications
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	105
http://linked.open...iv/tvurceVysledku	Mareš, Jiří J. Výborný, Zdeněk Hubík, Pavel Krištofik, Jozef Kindl, Dobroslav Boeykens, S. Leys, M. R.
http://linked.open...ain/vavai/riv/wos	000266263300075
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0021-8979
number of pages	8 (xsd:int)

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