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Description
  • Vrstvy diamantu dopovaného borem v širokém oboru koncenterací byly vypěstovány na (100) monokrystalických substrátech. Charakterizovány byly pomocí optických a elektrických metod. Získány vrstvy s Hallovou pohyblivostí blízkou pohyblivosti děr v přírodním diamantu. Morfologie vrstev byla sledována pomocí skenovací elektronové mikroskopie, jejich čistota zkoumána pomocí katodoluminiscence. Fotovodivostní spektroskopie (FTPS) odhalila vliv koncentrace boru na počátek fotoionizace a na excitované stavy. (cs)
  • Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases.
  • Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases. (en)
Title
  • Characterization of boron doped diamond epilayers grown in a NIRIM type reactor
  • Characterization of boron doped diamond epilayers grown in a NIRIM type reactor (en)
  • Charakterizace epitaxních vrstev diamantu dotovaného borem vypěstovaných v reaktoru typu NIRIM (cs)
skos:prefLabel
  • Characterization of boron doped diamond epilayers grown in a NIRIM type reactor
  • Characterization of boron doped diamond epilayers grown in a NIRIM type reactor (en)
  • Charakterizace epitaxních vrstev diamantu dotovaného borem vypěstovaných v reaktoru typu NIRIM (cs)
skos:notation
  • RIV/68378271:_____/08:00320729!RIV09-AV0-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(AV0Z10100520)
http://linked.open...iv/cisloPeriodika
  • 7
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 359575
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/08:00320729
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • CVD diamond; homoepitaxy; P-type doping; electrical properties; optical properties (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV
  • [C5573F8C732E]
http://linked.open...i/riv/nazevZdroje
  • Diamond and Related Materials
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 17
http://linked.open...iv/tvurceVysledku
  • Haenen, K.
  • Vorlíček, Vladimír
  • D´Haen, J.
  • Daenen, M.
  • D´Olieslaeger, M.
  • Lazea, A.
  • Mortet, V.
  • Teraji, T.
http://linked.open...ain/vavai/riv/wos
  • 000259598300059
http://linked.open...n/vavai/riv/zamer
issn
  • 0925-9635
number of pages
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