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  • New types of metallization based on low work function metals were used to prepare ohmic contacts for SI-GaAs radiation detectors. Such metals form blocking barriers for holes. I-V characteristics of the detectors exhibit, comparing with the standard AuGeNi metallization, a reduction of the forward current and other unusual features deserving a more detailed investigation.
  • New types of metallization based on low work function metals were used to prepare ohmic contacts for SI-GaAs radiation detectors. Such metals form blocking barriers for holes. I-V characteristics of the detectors exhibit, comparing with the standard AuGeNi metallization, a reduction of the forward current and other unusual features deserving a more detailed investigation. (en)
  • Pro ohmické kontakty k SI-GaAs detektoru byly použity nové typy metalizace založené na kovech s nízkou výstupní prací (In, Gd, Mg), které vytvářejí blokující bariery pro díry. Voltampérové charakteristiky těchto detektorů vykazují, ve srovnání se standardní metalizací AuGeNi, redukci propustného proudu a další neobvyklé rysy, které si zasluhují podrobnějšího studia. (cs)
Title
  • Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance
  • Studium objemových detektorů záření založených na semiizolačním GaAs: role metalizace ohmického kontaktu v transportu elektrického náboje a v detekční účinnosti (cs)
  • Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance (en)
skos:prefLabel
  • Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance
  • Studium objemových detektorů záření založených na semiizolačním GaAs: role metalizace ohmického kontaktu v transportu elektrického náboje a v detekční účinnosti (cs)
  • Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance (en)
skos:notation
  • RIV/68378271:_____/08:00320708!RIV09-AV0-68378271
http://linked.open...avai/riv/aktivita
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  • P(IAA1010404), Z(AV0Z10100521)
http://linked.open...vai/riv/dodaniDat
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  • 398088
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  • RIV/68378271:_____/08:00320708
http://linked.open...riv/jazykVysledku
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  • radiation detector; semi-insulating GaAs; ohmic contact; work function (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [C368346B25A9]
http://linked.open...v/mistoKonaniAkce
  • Smolenice Castle
http://linked.open...i/riv/mistoVydani
  • Piscataway, N.J
http://linked.open...i/riv/nazevZdroje
  • ASDAM 2008
http://linked.open...in/vavai/riv/obor
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Hubík, Pavel
  • Dubecký, F.
  • Gombia, E.
  • Boháček, P.
  • Zaťko, B.
  • Chromík, Š.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
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number of pages
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  • IEEE Operation Center
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  • 978-1-4244-2325-5
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