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Description
  • Transientní spektroskopie hlubokých hladin (DLTS) byla použita ke studiu křemíkových diod připravených difúzí Al do materiálu typu n. Byla navržena a ověřena jednoduchá metoda umožňující správně přiřadit pozorované hladiny k oblastem typu n a p. (cs)
  • Deep level transient spectroscopy (DLTS)measurements were carried out on silicon diodes prepared by Al-diffusion into n-type material. A simple method of correct assignment of the observed traps to either side of the junction was outlined and tested.
  • Deep level transient spectroscopy (DLTS)measurements were carried out on silicon diodes prepared by Al-diffusion into n-type material. A simple method of correct assignment of the observed traps to either side of the junction was outlined and tested. (en)
Title
  • Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique
  • Interpretace DLTS spekter p-n přechodů v křemíku připravených difúzní technologií (cs)
  • Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique (en)
skos:prefLabel
  • Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique
  • Interpretace DLTS spekter p-n přechodů v křemíku připravených difúzní technologií (cs)
  • Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique (en)
skos:notation
  • RIV/68378271:_____/08:00320707!RIV09-AV0-68378271
http://linked.open...avai/riv/aktivita
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  • P(GA202/07/0525), Z(AV0Z10100521)
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  • 373025
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  • RIV/68378271:_____/08:00320707
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  • silicon; p-n junction; deep levels; DLTS (en)
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  • [DDA6FC2E38C3]
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  • Smolenice Castle
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  • Piscataway, N.J
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  • ASDAM 2008
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  • Mareš, Jiří J.
  • Hubík, Pavel
  • Krištofik, Jozef
  • Kindl, Dobroslav
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number of pages
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  • IEEE Operation Center
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  • 978-1-4244-2325-5
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