About: Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Preparation of thin film silicon at high growth rate is an important target for its application in solar cells. The properties of hydrogenated microcrystalline silicon, prepared with the help of PECVD multi-hole cathode in a high pressure and depletion regime in a wide range of thicknesses are described in detail. We illustrate the surprising result that we can prepare high growth rate microcrystalline silicon from 0.4 up to 30 μm thickness without great peel-off problems. The room temperature dark DC conductivity, as well as the crystallinity, increased up to 5 μm film thickness and then started to decrease again. These results are explained by the initial temperature profiling and a thickness-induced increase of the lateral inhomogeneity. Preparation of thin film silicon at high growth rate is an important target for its application in solar cells. The properties of hydrogenated microcrystalline silicon, prepared with the help of PECVD multi-hole cathode in a high pressure and depletion regime in a wide range of thicknesses are described in detail. We illustrate the surprising result that we can prepare high growth rate microcrystalline silicon from 0.4 up to 30 μm thickness without great peel-off problems. The room temperature dark DC conductivity, as well as the crystallinity, increased up to 5 μm film thickness and then started to decrease again. These results are explained by the initial temperature profiling and a thickness-induced increase of the lateral inhomogeneity. (en) Příprava tenkých křemíkových vrstev za vysoké rychlosti růstu je důležitým cílem pro použití ve slunečních článcích. Jsou popsány vlastnosti hydrogenovaného mikrokrystalického křemíku připraveného pomocí PECVD s mnohonásobnou dutinovou katodou při vysokém tlaku v režimu ochuzené směsi v rozsahu tlouštěk od 0,4 μm až do 30 μm bez problémů s loupáním vrstev. (cs)
Title	Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses (en) Vlastnosti tenkých křemíkových vrstev připravených vysokou rychlostí růstu v širokém rozsahu tlouštěk (cs)
skos:prefLabel	Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses (en) Vlastnosti tenkých křemíkových vrstev připravených vysokou rychlostí růstu v širokém rozsahu tlouštěk (cs)
skos:notation	RIV/68378271:_____/08:00320320!RIV09-AV0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GD202/05/H003), P(IAA1010316), P(IAA1010413), P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	19-25
http://linked.open...vai/riv/dodaniDat	2009
http://linked.open...aciTvurceVysledku	Stuchlíková, The-Ha Fejfar, Antonín Ledinský, Martin Stuchlík, Jiří Mates, Tomáš Kočka, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	390517
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/08:00320320
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	conductivity; plasma deposition (en)
http://linked.open.../riv/klicoveSlovo	conductivity plasma deposition
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[1D6D89B9E6A2]
http://linked.open...i/riv/nazevZdroje	Journal of Non-Crystalline Solids
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Nanoscience and nanotechnology with scanning probe microscopes: from atomic processes to material properties Functional hybrid nanosystems of semiconductors and metals with organic materials (FUNS) Physics of complex condensed systems Structures for Nanophotonics and Nanoelectronics Microcrystalline and nanocrystalline semiconductors for photonics:Electronic processes on the scales of nanometers and femtoseconds
http://linked.open...UplatneniVysledku	2008
http://linked.open...v/svazekPeriodika	354
http://linked.open...iv/tvurceVysledku	Ledinský, Martin Fejfar, Antonín Stuchlík, Jiří Kočka, Jan Stuchlíková, The-Ha Mates, Tomáš
http://linked.open...ain/vavai/riv/wos	000256500400084
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0022-3093
number of pages	4 (xsd:int)

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