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Description
| - Studovali jsme elektroluminiscenční charakteristiky a fotoelektrické vlastnosti asymetrické p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II. Pozorovali jsme intenzivní pozitivní a negativní elektorluminiscenci při teplotách 300-400 K. (cs)
- We studied electroluminescent characteristics and photoelectrical properties of asymmetric type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure. Intensive positive and negative electroluminescence was observed at T=300-400 K.
- We studied electroluminescent characteristics and photoelectrical properties of asymmetric type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure. Intensive positive and negative electroluminescence was observed at T=300-400 K. (en)
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Title
| - MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)
- MIR fotovoltaické detektory na bázi p InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II s hlubokými kvantovými jámami na rozhraní (9. Mez. konf. o optoelektronice ve střední infračervené oblasti: materiály a součástky - MIOMD-IX, 7.-11.9.08) (cs)
- MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany) (en)
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skos:prefLabel
| - MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)
- MIR fotovoltaické detektory na bázi p InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II s hlubokými kvantovými jámami na rozhraní (9. Mez. konf. o optoelektronice ve střední infračervené oblasti: materiály a součástky - MIOMD-IX, 7.-11.9.08) (cs)
- MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany) (en)
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skos:notation
| - RIV/68378271:_____/08:00317930!RIV09-AV0-68378271
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/08:00317930
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - MIR; photodetectors; negative electroluminescence; LP-MOV (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Hulicius, Eduard
- Pangrác, Jiří
- Hospodková, Alice
- Ivanov, E. V.
- Mikhailova, M. P.
- Yakovlev, Yu. P.
- Andreev, I. A.
- Grebentschikova, E. A.
- Melichar, Karel
- Šimeček, Tomislav
- Moiseev, K. D.
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http://linked.open...n/vavai/riv/zamer
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