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Description
  • Studovali jsme elektroluminiscenční charakteristiky a fotoelektrické vlastnosti asymetrické p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II. Pozorovali jsme intenzivní pozitivní a negativní elektorluminiscenci při teplotách 300-400 K. (cs)
  • We studied electroluminescent characteristics and photoelectrical properties of asymmetric type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure. Intensive positive and negative electroluminescence was observed at T=300-400 K.
  • We studied electroluminescent characteristics and photoelectrical properties of asymmetric type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure. Intensive positive and negative electroluminescence was observed at T=300-400 K. (en)
Title
  • MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)
  • MIR fotovoltaické detektory na bázi p InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II s hlubokými kvantovými jámami na rozhraní (9. Mez. konf. o optoelektronice ve střední infračervené oblasti: materiály a součástky - MIOMD-IX, 7.-11.9.08) (cs)
  • MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany) (en)
skos:prefLabel
  • MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)
  • MIR fotovoltaické detektory na bázi p InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II s hlubokými kvantovými jámami na rozhraní (9. Mez. konf. o optoelektronice ve střední infračervené oblasti: materiály a součástky - MIOMD-IX, 7.-11.9.08) (cs)
  • MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany) (en)
skos:notation
  • RIV/68378271:_____/08:00317930!RIV09-AV0-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(AV0Z10100521)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 379574
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/08:00317930
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • MIR; photodetectors; negative electroluminescence; LP-MOV (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [32AEED546EED]
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Hulicius, Eduard
  • Pangrác, Jiří
  • Hospodková, Alice
  • Ivanov, E. V.
  • Mikhailova, M. P.
  • Yakovlev, Yu. P.
  • Andreev, I. A.
  • Grebentschikova, E. A.
  • Melichar, Karel
  • Šimeček, Tomislav
  • Moiseev, K. D.
http://linked.open...n/vavai/riv/zamer
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