About: Growth of indium phosphide bulk crystals for radiation detectors

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Pro růst monokrystalického InP Czochralského metodou se využívá polykrystalický InP připravený Bridgemanovu nízkotlakou vertikální syntézu. Semiizolačního stavu, který je nezbytný pro detektorové struktury, bylo dosaženo dopováním železem nebo ko-dopováním Fe-Zn a Ti-Zn. Krystaly dopované Ta byly tepelně formovány. Defekty byly stanovovány na leptaných vzorcích RTG metodou. Krystaly byly charakterizovány hmotovou spekroskopii a měřením Hallova jevu. U detektorových struktur byla měřena detekční účinnost. (cs) Bulk InP single crystals were grown by Czochralski method using vertical Bridgman low pressure synthesis of polycrystalline InP. The semi-insulating state necessary for radiation detection was created by iron doping or Fe-Zn and Ti-Zn co-doping. High temperature annealing was also done. Defects were studied by X-ray methods. For characterization the Hall measurements and mass spectroscopy were used. The detection efficiency of prepared detection structures was measured. Bulk InP single crystals were grown by Czochralski method using vertical Bridgman low pressure synthesis of polycrystalline InP. The semi-insulating state necessary for radiation detection was created by iron doping or Fe-Zn and Ti-Zn co-doping. High temperature annealing was also done. Defects were studied by X-ray methods. For characterization the Hall measurements and mass spectroscopy were used. The detection efficiency of prepared detection structures was measured. (en)
Title	Growth of indium phosphide bulk crystals for radiation detectors Growth of indium phosphide bulk crystals for radiation detectors (en) Růst objemových krystalů indium fosfidu pro detektory záření (cs)
skos:prefLabel	Growth of indium phosphide bulk crystals for radiation detectors Growth of indium phosphide bulk crystals for radiation detectors (en) Růst objemových krystalů indium fosfidu pro detektory záření (cs)
skos:notation	RIV/68378271:_____/08:00308797!RIV08-AV0-68378271
http://linked.open.../vavai/riv/strany	;;;
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/06/0153), P(KAN400670651), Z(AV0Z10100523), Z(AV0Z20670512)
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Pekárek, Ladislav
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	369685
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/08:00308797
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor technology; indium compounds (en)
http://linked.open.../riv/klicoveSlovo	indium compounds semiconductor technology
http://linked.open...ontrolniKodProRIV	[D378DE3D2771]
http://linked.open...v/mistoKonaniAkce	Versailles
http://linked.open...i/riv/mistoVydani	Piscataway
http://linked.open...i/riv/nazevZdroje	IPRM 2008 - Proceedings of the 20th Indium Phosphide and Related Materials Conference
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Utilization of specific properties of rare earths in preparation of InP based radiation detector structures Study of interfaces between metal nanoparticles and InP for gas sensing and radiations detection
http://linked.open...UplatneniVysledku	2008
http://linked.open...iv/tvurceVysledku	Žďánský, Karel Procházková, Olga Pekárek, Ladislav
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2008-05-25 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Intense Radiation Sources and Radiation-Matter Interaction Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Institute of Electrical and Electronic Engineers
https://schema.org/isbn	978-1-4244-2259-3

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