About: Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski–Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 μm according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown. Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski–Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 μm according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown. (en) Struktury s jednou a dvěma vrstvami InAs/GaAs kvantových teček a vrstvami redukujícími pnutí byly připraveny pomocí MOVPE. Růst těchto struktur, vykazujících velmi intenzivní fotoluminiscenci za pokojové teploty emitované na vlnových délkách od 1.25 do 1.55 μm byl monitorován pomocí RAS. (cs)
Title	Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures Růst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantovými tečkami (cs) Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures (en)
skos:prefLabel	Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures Růst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantovými tečkami (cs) Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures (en)
skos:notation	RIV/68378271:_____/08:00308047!RIV08-AV0-68378271
http://linked.open.../vavai/riv/strany	2229;2233
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/05/0242), P(GA202/06/0718), P(IAA100100719), P(KJB101630601), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	7-9
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Šimeček, Tomislav Pangrác, Jiří Hulicius, Eduard Melichar, Karel Kuldová, Karla Oswald, Jiří Vyskočil, Jan Hospodková, Alice
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	369673
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/08:00308047
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	nanostructures; metalorganic vapor-phase epitaxy; semiconducting III–V materials (en)
http://linked.open.../riv/klicoveSlovo	semiconducting III–V materials nanostructures metalorganic vapor-phase epitaxy
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[7E9AD80BCE6C]
http://linked.open...i/riv/nazevZdroje	Journal of Crystal Growth
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	8 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Space resolved ballistic electron emission spectroscopy on individual InAs/GaAs dots embedded in AlGaAs barriers Quantum dot engineering Controlled quantum dot MOVPE growth Morfology of quantum dots and its impact to the electronic structure
http://linked.open...UplatneniVysledku	2008
http://linked.open...v/svazekPeriodika	310
http://linked.open...iv/tvurceVysledku	Hulicius, Eduard Pangrác, Jiří Hospodková, Alice Kuldová, Karla Oswald, Jiří Vyskočil, Jan Melichar, Karel Šimeček, Tomislav
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0022-0248
number of pages	5 (xsd:int)

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 77 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software