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rdf:type
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Description
| - V článku je popsán velký posun luminiscence k delším vlnovým délkám (od 1.25 m do 1.45 m) za pokojové teploty pro jednovrstvou strukturu kvantových teček přikrytých InxGa1-xAs vrstvou redukující napětí ve struktuře při vzrůstající koncentraci In (od 0 % do 29 %). Příslušné přechody byly studovány v magnetickém poli a při různém excitačním výkonu a srovnány s výpočty pomocí jednoduchého modelu jednočásticové efektivní hmotnosti s proměnnou energií (cs)
- A strong red shift from 1.25 m to 1.45 m of room temperature photoluminescence maxima of single quantum dot layer structures covered by InxGa1-xAs strain reducing layer when increased In content (from 0 % to 29 %) is observed. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energy-dependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots
- A strong red shift from 1.25 m to 1.45 m of room temperature photoluminescence maxima of single quantum dot layer structures covered by InxGa1-xAs strain reducing layer when increased In content (from 0 % to 29 %) is observed. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energy-dependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots (en)
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Title
| - 1.3 m emission from InAs/GaAs quantum dots
- 1.3 m emise InAs/GaAs kvantových teček (cs)
- 1.3 m emission from InAs/GaAs quantum dots (en)
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skos:prefLabel
| - 1.3 m emission from InAs/GaAs quantum dots
- 1.3 m emise InAs/GaAs kvantových teček (cs)
- 1.3 m emission from InAs/GaAs quantum dots (en)
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skos:notation
| - RIV/68378271:_____/06:00078520!RIV07-GA0-68378271
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA202/05/0242), P(GA202/06/0718)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/06:00078520
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - nanostructures; metalorganic vapor phase epitaxy; arsenides; semiconducting III–V materials (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - DE - Spolková republika Německo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Physica Status Solidi C: conferences and critical reviews
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Hulicius, Eduard
- Pangrác, Jiří
- Hospodková, Alice
- Kuldová, Karla
- Oswald, Jiří
- Humlíček, J.
- Potemski, M.
- Melichar, Karel
- Křápek, V.
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issn
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number of pages
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