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Description
  • V článku je popsán velký posun luminiscence k delším vlnovým délkám (od 1.25 m do 1.45 m) za pokojové teploty pro jednovrstvou strukturu kvantových teček přikrytých InxGa1-xAs vrstvou redukující napětí ve struktuře při vzrůstající koncentraci In (od 0 % do 29 %). Příslušné přechody byly studovány v magnetickém poli a při různém excitačním výkonu a srovnány s výpočty pomocí jednoduchého modelu jednočásticové efektivní hmotnosti s proměnnou energií (cs)
  • A strong red shift from 1.25 m to 1.45 m of room temperature photoluminescence maxima of single quantum dot layer structures covered by InxGa1-xAs strain reducing layer when increased In content (from 0 % to 29 %) is observed. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energy-dependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots
  • A strong red shift from 1.25 m to 1.45 m of room temperature photoluminescence maxima of single quantum dot layer structures covered by InxGa1-xAs strain reducing layer when increased In content (from 0 % to 29 %) is observed. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energy-dependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots (en)
Title
  • 1.3 m emission from InAs/GaAs quantum dots
  • 1.3 m emise InAs/GaAs kvantových teček (cs)
  • 1.3 m emission from InAs/GaAs quantum dots (en)
skos:prefLabel
  • 1.3 m emission from InAs/GaAs quantum dots
  • 1.3 m emise InAs/GaAs kvantových teček (cs)
  • 1.3 m emission from InAs/GaAs quantum dots (en)
skos:notation
  • RIV/68378271:_____/06:00078520!RIV07-GA0-68378271
http://linked.open.../vavai/riv/strany
  • 3811;3814
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/05/0242), P(GA202/06/0718)
http://linked.open...iv/cisloPeriodika
  • 11
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 510552
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/06:00078520
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • nanostructures; metalorganic vapor phase epitaxy; arsenides; semiconducting III–V materials (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV
  • [DF14A07E390D]
http://linked.open...i/riv/nazevZdroje
  • Physica Status Solidi C: conferences and critical reviews
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 3
http://linked.open...iv/tvurceVysledku
  • Hulicius, Eduard
  • Pangrác, Jiří
  • Hospodková, Alice
  • Kuldová, Karla
  • Oswald, Jiří
  • Humlíček, J.
  • Potemski, M.
  • Melichar, Karel
  • Křápek, V.
issn
  • 1610-1634
number of pages
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