About: Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates

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About: Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Due to the development and growing demends for inplantation techniques, the laser plasma as a source of multiply charged ions been investigated. This experiment concerned the characterization and optimization of laser produced Ge ion fluxes as well as the analysis of the direct implantation of these ions into SiO2 films prepared on the surface of a Si single crystal in the bulk profiles of Ge ion implantation with maximum depth of similar to 450 nm Due to the development and growing demends for inplantation techniques, the laser plasma as a source of multiply charged ions been investigated. This experiment concerned the characterization and optimization of laser produced Ge ion fluxes as well as the analysis of the direct implantation of these ions into SiO2 films prepared on the surface of a Si single crystal in the bulk profiles of Ge ion implantation with maximum depth of similar to 450 nm (en) Vzhledem k vývoji a rostoucím požadavkům na implantační techniky bylo zkoumáno laserové plazma jako zdroj vícenásobných iontů. Experimenty zahrnují stanovení charakteristik a optimalizaci toku laserem produkovaných Ge iontů a analysy přímé implantace těchto iontů do SiO2 vrstev na povrchu Si krystalu\|. Objemový profil implantovaných Ge iontů má maximální hloubku 450 nm (cs)
Title	Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates (en) Přímá implantace Ge iontů, produkovaných laserovými pulsy o velké energii a nízké intensitě, do SiO2 vrstev na Si podložkách (cs)
skos:prefLabel	Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates (en) Přímá implantace Ge iontů, produkovaných laserovými pulsy o velké energii a nízké intensitě, do SiO2 vrstev na Si podložkách (cs)
skos:notation	RIV/68378271:_____/06:00054548!RIV07-AV0-68378271
http://linked.open.../vavai/riv/strany	148;181
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(LC528), Z(AV0Z10100523), Z(AV0Z20430508)
http://linked.open...iv/cisloPeriodika	-
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Pfeifer, Miroslav Rohlena, Karel Krása, Josef Láska, Leoš
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	471822
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/06:00054548
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	laser plasma; Ge ions; ion implantation (en)
http://linked.open.../riv/klicoveSlovo	laser plasma ion implantation Ge ions
http://linked.open...odStatuVydavatele	SE - Švédské království
http://linked.open...ontrolniKodProRIV	[F96EC30AAFD1]
http://linked.open...i/riv/nazevZdroje	Physica Scripta
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	13 (xsd:int)
http://linked.open...vavai/riv/projekt	Centre of Laser Plasma
http://linked.open...UplatneniVysledku	2006
http://linked.open...v/svazekPeriodika	T123
http://linked.open...iv/tvurceVysledku	Krása, Josef Láska, Leoš Pfeifer, Miroslav Rohlena, Karel Torrisi, L. Ullschmied, Jiří Parys, P. Badziak, J. Wolowski, J. Gammino, S. Mezzasalma, A. Boody, F. P. Rosinski, J. M.
http://linked.open...n/vavai/riv/zamer	Intense Radiation Sources and Radiation-Matter Interaction Physical and chemical processes in plasmas and theis applications
issn	0031-8949
number of pages	4 (xsd:int)

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