Heterostructures SiC/AlGaN/GaN were investigated by the DLTS Metod in order to correlate activation energie of deep levels with AlGaN layer composition and 4H-SiC substráte orientation.
Heterostructures SiC/AlGaN/GaN were investigated by the DLTS Metod in order to correlate activation energie of deep levels with AlGaN layer composition and 4H-SiC substráte orientation. (en)
Heterostruktury SiC/AlGaN/GaN byly zkoumány metodou DLTS s cílem najít souvislost mezi aktivační energií hlubokých hladin a složením vrstvy AlGaN, případně orientací substrátu 4H-SiC (cs)