About: Investigation of plasma produced by high-energy low-intesity laser pulses for implantation of Ge ions into Si and SiO2 substrates

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About: Investigation of plasma produced by high-energy low-intesity laser pulses for implantation of Ge ions into Si and SiO2 substrates Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this contribution we describe the characterization and optimization of laser-produced Ge ion fluxes as well as analysis of the direct implantation of these ions into Si and SiO2 substrates at the PALS. The Ge target was irradiated using laser pulses of energy up to 50 J. The maximum depth of implantation of Ge ions was ~450nm. In this contribution we describe the characterization and optimization of laser-produced Ge ion fluxes as well as analysis of the direct implantation of these ions into Si and SiO2 substrates at the PALS. The Ge target was irradiated using laser pulses of energy up to 50 J. The maximum depth of implantation of Ge ions was ~450nm. (en) V tomto příspěvku je charakterizován optimalizovaný tok Ge iontů, získaný ozářením Ge terčíku pulsy jodového laseru PALS o energiích do 50 J, a analyzována přímá implantace těchto iontů do Si a SiO2 podložek. Maximální hloubka implantace Ge iontů byla ~450nm. (cs)
Title	Investigation of plasma produced by high-energy low-intesity laser pulses for implantation of Ge ions into Si and SiO2 substrates Investigation of plasma produced by high-energy low-intesity laser pulses for implantation of Ge ions into Si and SiO2 substrates (en) Studium plazmatu produkovaného laserovými pulsy o vysoké energii a nízké intenzitě pro implantaci Ge iontů do Si a SiO2 podložek (cs)
skos:prefLabel	Investigation of plasma produced by high-energy low-intesity laser pulses for implantation of Ge ions into Si and SiO2 substrates Investigation of plasma produced by high-energy low-intesity laser pulses for implantation of Ge ions into Si and SiO2 substrates (en) Studium plazmatu produkovaného laserovými pulsy o vysoké energii a nízké intenzitě pro implantaci Ge iontů do Si a SiO2 podložek (cs)
skos:notation	RIV/68378271:_____/05:00031345!RIV06-AV0-68378271
http://linked.open.../vavai/riv/strany	303;306
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z10100523)
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Pfeifer, Miroslav Rohlena, Karel Krása, Josef Láska, Leoš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	525615
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/05:00031345
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	laser plasma; Ge ions; laser implantation (en)
http://linked.open.../riv/klicoveSlovo	laser plasma Ge ions laser implantation
http://linked.open...ontrolniKodProRIV	[1267E09FF2C3]
http://linked.open...v/mistoKonaniAkce	Opole-Turawa
http://linked.open...i/riv/mistoVydani	Melville
http://linked.open...i/riv/nazevZdroje	PLASMA 2005: Int. Conf. on Research and Applications of Plasmas; 3rd German-Polish Conf.on Plasma Diagnostics for Fusion and Applications; 5th French-Polish Seminar on Thermal Plasma in Space and Labo
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	13 (xsd:int)
http://linked.open...UplatneniVysledku	2005
http://linked.open...iv/tvurceVysledku	Krása, Josef Láska, Leoš Pfeifer, Miroslav Rohlena, Karel Torrisi, L. Ullschmied, Jiří Parys, P. Badziak, J. Rosinski, M. Wolowski, J. Gammino, S. Mezzasalma, A. Boody, F. P.
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2005-09-06 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Intense Radiation Sources and Radiation-Matter Interaction
issn	0094-243X
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	American Institut of Physics

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