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rdf:type
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Description
| - Hydrogenated amorphous silicon oxycarbide (a-SiOC:H) thin films were deposited on silicon wafers from vinyltriethoxysilane(VTES) precursor. The elemental comosition of thin films were studied by conventional and resonant Rutherford Bacscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C. and O bulk content was correlated with surface one determined from analyses of the photoelectron spectra using XPS
- Hydrogenated amorphous silicon oxycarbide (a-SiOC:H) thin films were deposited on silicon wafers from vinyltriethoxysilane(VTES) precursor. The elemental comosition of thin films were studied by conventional and resonant Rutherford Bacscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C. and O bulk content was correlated with surface one determined from analyses of the photoelectron spectra using XPS (en)
- Tenké vrstvy hydrogenovaného amorfního oxikarbidu křemíku (a-SiOC:H) byly deponovány na křemíkové podložky z prekurzoru VTES. Složení tenkých vrstev bylo studováno běžnou a resonanční metodou RBS a ERDA. Objemové koncentrace Si, C a O byly porovnány s povrchově citlivými údaji z XPS (cs)
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Title
| - Basic characteristics of the a-SiOC:H thin films prepared by PE CVD
- Basic characteristics of the a-SiOC:H thin films prepared by PE CVD (en)
- Charakterizace tenkých vrstev a-SiOC:H připravených metodou PECVD (cs)
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skos:prefLabel
| - Basic characteristics of the a-SiOC:H thin films prepared by PE CVD
- Basic characteristics of the a-SiOC:H thin films prepared by PE CVD (en)
- Charakterizace tenkých vrstev a-SiOC:H připravených metodou PECVD (cs)
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skos:notation
| - RIV/68378271:_____/04:00104229!RIV/2005/AV0/A02005/N
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA104/03/0236), P(KSK1010104), P(ME 597), P(OC 527.110), Z(AV0Z1010914)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/04:00104229
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - vinyltriethoxysilane; thin film; PECVD (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Czechoslovak Journal of Physics
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Peřina, Vratislav
- Zemek, Josef
- Přikryl, R.
- Vaněk, J.
- Čech, V.
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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