Byla provedena tensorová LEED analýza intenzit elektronových svazků difraktovaných od vzorku GaAs(001)-c(4x4), který byl připraven epitaxí z molekulárních svazků (cs)
The tensor LEED analysis of the intensities of electron beams diffracted from the GaAs(001)-c(4X4) grown by molecular beam epitaxy (MBE) has been performed
The tensor LEED analysis of the intensities of electron beams diffracted from the GaAs(001)-c(4X4) grown by molecular beam epitaxy (MBE) has been performed (en)
electron-solid interactions; low energy electron diffraction(LEED); molecular beam epitaxy(MBE); surface relaxation and reconstruction; gallium arsenide; low index single crystal scattering; diffraction (en)