About: Lasers with .delta. In As layers in GaAs.

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About: Lasers with .delta. In As layers in GaAs. Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Electroluminescence of lasers with different number (1,3,5,7) of .delta. InAs layers in GaAs prepared by Low Pressure Metal-Organic Vapor Phase Epitaxy was investigated. Results show that by increasing the number of .delta. InAs layers and decreasing the distance between these layers it is possible to decrease the lasing emission energy below 1.15 eV. Electroluminescence of lasers with different number (1,3,5,7) of .delta. InAs layers in GaAs prepared by Low Pressure Metal-Organic Vapor Phase Epitaxy was investigated. Results show that by increasing the number of .delta. InAs layers and decreasing the distance between these layers it is possible to decrease the lasing emission energy below 1.15 eV. (en)
Title	Lasers with .delta. In As layers in GaAs. Lasers with .delta. In As layers in GaAs. (en)
skos:prefLabel	Lasers with .delta. In As layers in GaAs. Lasers with .delta. In As layers in GaAs. (en)
skos:notation	RIV/68378271:_____/02:02020006!RIV/2003/AV0/A02003/N
http://linked.open.../vavai/riv/strany	312;316
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/99/0414), Z(AV0Z1010914), Z(MSM 212300014)
http://linked.open...iv/cisloPeriodika	N/A
http://linked.open...vai/riv/dodaniDat	2003
http://linked.open...aciTvurceVysledku	Šimeček, Tomislav Pangrác, Jiří Hulicius, Eduard Petříček, Otto Melichar, Karel Kuldová, Karla Oswald, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	651581
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/02:02020006
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor lasers; - isovalent .delta. layers; - InAs; GaAs; - electroluminescence (en)
http://linked.open.../riv/klicoveSlovo	GaAs - electroluminescence - InAs - isovalent .delta. layers semiconductor lasers
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[2E4D4C03A07C]
http://linked.open...i/riv/nazevZdroje	Materials Science and Engineering. B
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	7 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	MOVPE prepared materials and structures for electronic and optoelectronic devices
http://linked.open...UplatneniVysledku	2002
http://linked.open...v/svazekPeriodika	88
http://linked.open...iv/tvurceVysledku	Hulicius, Eduard Pangrác, Jiří Hazdra, P. Kuldová, Karla Oswald, Jiří Voves, J. Melichar, Karel Šimeček, Tomislav Petříček, Otto
http://linked.open...n/vavai/riv/zamer	Experimentální a teoretický výzkum kondenzovaných systémů s význačnými fyzikálními vlastnostmi http://linked.opendata.cz/resource/domain/vavai/zamer/MSM%20212300014
issn	0921-5107
number of pages	5 (xsd:int)

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