About: Silicon-based light-emitting materials:implanted SiO 2 films and wide bandgap a-Si:H.     Goto   Sponge   NotDistinct   Permalink

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  • We review critically recent results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si + implanted SiO 2 films from point of view of light-emission applications. Wide bandgap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibits room temperature photoluminescence in the visible region.
  • We review critically recent results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si + implanted SiO 2 films from point of view of light-emission applications. Wide bandgap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibits room temperature photoluminescence in the visible region. (en)
Title
  • Silicon-based light-emitting materials:implanted SiO 2 films and wide bandgap a-Si:H.
  • Silicon-based light-emitting materials:implanted SiO 2 films and wide bandgap a-Si:H. (en)
skos:prefLabel
  • Silicon-based light-emitting materials:implanted SiO 2 films and wide bandgap a-Si:H.
  • Silicon-based light-emitting materials:implanted SiO 2 films and wide bandgap a-Si:H. (en)
skos:notation
  • RIV/68378271:_____/01:02010330!RIV/2003/AV0/A02003/N
http://linked.open.../vavai/riv/strany
  • 66;75
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  • Z(AV0Z1010914)
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  • 695713
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  • RIV/68378271:_____/01:02010330
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  • amorphous silicon; - implanted SiO 2; - silicon nanocrystals; photoluminescence; - electroluminescence (en)
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  • [CB20B0EAE64B]
http://linked.open...v/mistoKonaniAkce
  • Vilnius [LT]
http://linked.open...i/riv/mistoVydani
  • Bellingham
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  • Optical Organic and Inorganic Materials.
http://linked.open...in/vavai/riv/obor
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  • Valenta, J.
  • Pelant, Ivan
  • Fojtík, Petr
  • Hönerlange, B.
  • Muller, D.
  • Dian, J.
  • Luterová, Kateřina
  • Rehspringer, J. L.
  • Tomasiunas, R.
  • Grob, J. J.
http://linked.open...vavai/riv/typAkce
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http://linked.open...n/vavai/riv/zamer
number of pages
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  • SPIE
https://schema.org/isbn
  • 0-8197-4120-1
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