Delta(Si)-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitance-voltage and deep level transient spectroscopy techniques. A ditailed analysis of the DLTS signal is performed.
Delta(Si)-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitance-voltage and deep level transient spectroscopy techniques. A ditailed analysis of the DLTS signal is performed. (en)