About: Mapping of Dopants in Silicon by Injection of Electrons

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Mapping of the p-type dopant in an n-type silicon substrate was studied on a planar structure composed of variously sized doped patterns of various dopant densities. The traditional imaging by means of secondary electrons and its quantifiability was verified and the method was extended to the very low energy range. Mapping of the p-type dopant in an n-type silicon substrate was studied on a planar structure composed of variously sized doped patterns of various dopant densities. The traditional imaging by means of secondary electrons and its quantifiability was verified and the method was extended to the very low energy range. (en)
Title	Mapping of Dopants in Silicon by Injection of Electrons Mapping of Dopants in Silicon by Injection of Electrons (en)
skos:prefLabel	Mapping of Dopants in Silicon by Injection of Electrons Mapping of Dopants in Silicon by Injection of Electrons (en)
skos:notation	RIV/68081731:_____/10:00352508!RIV11-AV0-68081731
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z20650511)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Hovorka, Miloš Frank, Luděk
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav přístrojové techniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	269637
http://linked.open...ai/riv/idVysledku	RIV/68081731:_____/10:00352508
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductors; dopant contrast; very low energy SEM (en)
http://linked.open.../riv/klicoveSlovo	dopant contrast semiconductors very low energy SEM
http://linked.open...ontrolniKodProRIV	[6D370245780D]
http://linked.open...v/mistoKonaniAkce	Toyama
http://linked.open...i/riv/mistoVydani	Toyama
http://linked.open...i/riv/nazevZdroje	Proceedings of 5th Japan-China-Norway Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Hovorka, Miloš Frank, Luděk
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-09-12 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Research into experimental methods for examination of the physical properties of matter and their application in advanced technologies
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	University of Toyama
https://schema.org/isbn	978-4-9903248-2-7

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