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rdf:type
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Description
| - Mechanismy zodpovědné za kontrast mezi různě dopovanými oblastmi polovodiče, pozorovaný v elektronově mikroskopických snímcích, jsou diskutovány z hlediska klíčových faktorů určujících znaménko a velikost kontrastu. Je podán přehled experimentálních dat získaných pomocí rastrovacího elektronového mikroskopu (REM), rastrovacího nízkoenergiového elektronového mikroskopu a fotoelektronového emisního mikroskopu, spolu s návody, které odtud vyplývají pro sestavení modelu kontrastního mechanismu. (cs)
- Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism.
- Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism. (en)
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Title
| - Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons
- Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons (en)
- Kontrast dopantu jako interpretační problém při zobrazování elektrony (cs)
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skos:prefLabel
| - Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons
- Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons (en)
- Kontrast dopantu jako interpretační problém při zobrazování elektrony (cs)
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skos:notation
| - RIV/68081731:_____/07:00082251!RIV07-AV0-68081731
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA202/04/0281), Z(AV0Z20650511)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68081731:_____/07:00082251
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - electron microscopic contrasts; semiconductors; dopant contrast; scanning electron microscopy; scanning low energy electron microscopy; photoelectron emission microscopy (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Hovorka, Miloš
- Müllerová, Ilona
- Frank, Luděk
- Mika, Filip
- Schönhense, G.
- Valdaitsev, D.
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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