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  • New experimental data are reviewed that throw more light on explanation of the electronic contrast, mediated by secondary electrons in the SEM and visualizing the doped areas in semiconductors. Observation of p.sup.+./sup. doped patterns on the n-type Si (111) was made in cathode lens equipped very low energy SEM both under UHV and standard vacuum conditions. Further, the same structure was examined in the Auger electron spectrometer with a scanned primary beam. Data were obtained for the as-inserted specimen aswell as for that in-situ cleaned by a ion beam. When interpreting the observations, the structure was found not to behave as a clean crystal with the local differences in the inner potential compensated via above-surface patch fields but, on contrary, underlined is the role of subsurface fields, generated by semiconductor-contaminantion or semiconductor-layer contacts.
  • New experimental data are reviewed that throw more light on explanation of the electronic contrast, mediated by secondary electrons in the SEM and visualizing the doped areas in semiconductors. Observation of p.sup.+./sup. doped patterns on the n-type Si (111) was made in cathode lens equipped very low energy SEM both under UHV and standard vacuum conditions. Further, the same structure was examined in the Auger electron spectrometer with a scanned primary beam. Data were obtained for the as-inserted specimen aswell as for that in-situ cleaned by a ion beam. When interpreting the observations, the structure was found not to behave as a clean crystal with the local differences in the inner potential compensated via above-surface patch fields but, on contrary, underlined is the role of subsurface fields, generated by semiconductor-contaminantion or semiconductor-layer contacts. (en)
Title
  • SEM acquired electronic contrast of doped areas in semiconductors and its interpretation.
  • SEM acquired electronic contrast of doped areas in semiconductors and its interpretation. (en)
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  • SEM acquired electronic contrast of doped areas in semiconductors and its interpretation.
  • SEM acquired electronic contrast of doped areas in semiconductors and its interpretation. (en)
skos:notation
  • RIV/68081731:_____/02:12020095!RIV/2003/AV0/A12003/N
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  • 9 ; 12
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  • P(IAA1065901), Z(AV0Z2065902)
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  • 663237
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  • RIV/68081731:_____/02:12020095
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  • secondary electrons; electronic contrast; semiconductors (en)
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  • [3BD43F348877]
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  • Toyama [JP]
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  • Proceedings of seminar on nanotechnology for fabrication of hybrid materials.
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  • Müllerová, Ilona
  • Frank, Luděk
  • El-Gomati, M.
  • Jayakody, H.
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  • JPJSMA
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