About: Oxygen precipitation studied by x-ray diffraction techniques

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report on study of oxygen precipitates grown of Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry and Laue transmission geometry. The analysis of diffraction curves in Laue geometry was done using Takagi equations and statistical dynamical theory of diffraction. These techniques allow us to determine as the radius of defect area as the defect concentrations from measurement in Laue geometry. These results obtained on silicon wafers exposed to two-step and three-step treatments were compared with other experimental techniques including transmission electron microscopy and infrared absorption spectroscopy, while only the largest precipitates are detected by other techniques. The results of all methods are good agreement. We report on study of oxygen precipitates grown of Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry and Laue transmission geometry. The analysis of diffraction curves in Laue geometry was done using Takagi equations and statistical dynamical theory of diffraction. These techniques allow us to determine as the radius of defect area as the defect concentrations from measurement in Laue geometry. These results obtained on silicon wafers exposed to two-step and three-step treatments were compared with other experimental techniques including transmission electron microscopy and infrared absorption spectroscopy, while only the largest precipitates are detected by other techniques. The results of all methods are good agreement. (en)
Title	Oxygen precipitation studied by x-ray diffraction techniques Oxygen precipitation studied by x-ray diffraction techniques (en)
skos:prefLabel	Oxygen precipitation studied by x-ray diffraction techniques Oxygen precipitation studied by x-ray diffraction techniques (en)
skos:notation	RIV/68081723:_____/11:00362811!RIV12-AV0-68081723
http://linked.open...avai/riv/aktivita	P S Z
http://linked.open...avai/riv/aktivity	P(GA202/09/1013), P(GP202/09/P410), S, Z(AV0Z20410507), Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika	-
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Svoboda, Milan Buršík, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fyziky materiálů AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	219340
http://linked.open...ai/riv/idVysledku	RIV/68081723:_____/11:00362811
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Czochralski silicon; oxygen precipitates; x-ray Laue diffraction (en)
http://linked.open.../riv/klicoveSlovo	Czochralski silicon oxygen precipitates x-ray Laue diffraction
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[4C096F1A42E5]
http://linked.open...i/riv/nazevZdroje	Solid State Phenomena
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Strain engineering in diluted magnetic semiconductors Nucleation and growth of oxygen precipitates in silicon
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	178 -179
http://linked.open...iv/tvurceVysledku	Bernatová, S. Buršík, Jiří Svoboda, Milan Caha, O. Meduňa, M. Růžička, J.
http://linked.open...n/vavai/riv/zamer	Physical properties of advanced materials in relation to their microstructure and processing Physical and chemical properties of advanced materials and structures
issn	1012-0394
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.4028/www.scientific.net/SSP.178-179.325

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