About: Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

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About: Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time (en)
Title	Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles (en)
skos:prefLabel	Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles (en)
skos:notation	RIV/67985882:_____/14:00428559!RIV15-AV0-67985882
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(LD12014)
http://linked.open...iv/cisloPeriodika	4
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Černohorský, Ondřej Grym, Jan Yatskiv, Roman
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	51105
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/14:00428559
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	electrophoretic deposition; Pt nanoparticles; Schottky diodes (en)
http://linked.open.../riv/klicoveSlovo	Schottky diodes Pt nanoparticles electrophoretic deposition
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[586AB566CEA8]
http://linked.open...i/riv/nazevZdroje	Semiconductor Science and Technology
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors.
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	29
http://linked.open...iv/tvurceVysledku	Grym, Jan Yatskiv, Roman Černohorský, Ondřej Dimitrakopulos, G. P. Komninou, Ph. Bazioti, C. Brus, V. V. Maryanchuk, P. D.
http://linked.open...ain/vavai/riv/wos	000333275600019
issn	0268-1242
number of pages	8 (xsd:int)
http://bibframe.org/vocab/doi	10.1088/0268-1242/29/4/045017

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