About: Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A method is described for the fabrication of highly rectifying Schottky contacts on n-type ZnO (O and Zn polar face) single crystals, both bare and partially covered with Pt nanoparticles, coated with mechanically deposited colloidal graphite. A layer of Pt nanoparticles deposited by in-situ pulsed electrophoretic deposition from isooctane colloid solutions is inserted between the graphite and the ZnO surface serves to dissociate hydrogen molecules in hydrogen sensing elements based on the highly rectifying Schottky barriers. The sensing elements are sensitive to gas mixtures with a low hydrogen concentration down to 10 ppm and show an extremely fast response above 1000 ppm. A method is described for the fabrication of highly rectifying Schottky contacts on n-type ZnO (O and Zn polar face) single crystals, both bare and partially covered with Pt nanoparticles, coated with mechanically deposited colloidal graphite. A layer of Pt nanoparticles deposited by in-situ pulsed electrophoretic deposition from isooctane colloid solutions is inserted between the graphite and the ZnO surface serves to dissociate hydrogen molecules in hydrogen sensing elements based on the highly rectifying Schottky barriers. The sensing elements are sensitive to gas mixtures with a low hydrogen concentration down to 10 ppm and show an extremely fast response above 1000 ppm. (en)
Title	Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing (en)
skos:prefLabel	Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing (en)
skos:notation	RIV/67985882:_____/12:00382124!RIV13-AV0-67985882
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(OC10021)
http://linked.open...iv/cisloPeriodika	10
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Žďánský, Karel Grym, Jan Yatskiv, Roman
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	167406
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/12:00382124
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Schottky diodes; ZnO; Hydrogen sensor (en)
http://linked.open.../riv/klicoveSlovo	Schottky diodes Hydrogen sensor ZnO
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[E6252A3F255E]
http://linked.open...i/riv/nazevZdroje	Carbon
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	50
http://linked.open...iv/tvurceVysledku	Grym, Jan Yatskiv, Roman Žďánský, Karel Piksová, K.
http://linked.open...ain/vavai/riv/wos	000305851700066
issn	0008-6223
number of pages	6 (xsd:int)

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