About: Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles     Goto   Sponge   NotDistinct   Permalink

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Description
  • Depositions of Pd nanoparticles (NPs) were performed on surfaces of semiconductor wafers of InP and GaN from isooctane colloid solutions with reverse micelles. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs. Large increase of current was observed after exposing voltage biased diodes to flow of hydrogen and nitrogen blend, representing more than two orders-of-magnitude improvement over the best results reported up to now.
  • Depositions of Pd nanoparticles (NPs) were performed on surfaces of semiconductor wafers of InP and GaN from isooctane colloid solutions with reverse micelles. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs. Large increase of current was observed after exposing voltage biased diodes to flow of hydrogen and nitrogen blend, representing more than two orders-of-magnitude improvement over the best results reported up to now. (en)
Title
  • Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
  • Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles (en)
skos:prefLabel
  • Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
  • Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles (en)
skos:notation
  • RIV/67985882:_____/11:00368040!RIV12-AV0-67985882
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(OC10021), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 490
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 202076
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/11:00368040
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductor devices; nanostructures; sensors (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [C74C9F8CB5BB]
http://linked.open...i/riv/nazevZdroje
  • Nanoscale Research Letters
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 6
http://linked.open...iv/tvurceVysledku
  • Žďánský, Karel
http://linked.open...ain/vavai/riv/wos
  • 000296254000002
http://linked.open...n/vavai/riv/zamer
issn
  • 1931-7573
number of pages
http://bibframe.org/vocab/doi
  • 10.1186/1556-276X-6-490
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