About: X-ray diffraction analysis of multilayer porous InP(001) structure

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The porous structures were formed by anodic oxidation of InP(001) substrates in aqueous HCl solution. The structural parameters of the sublayers were varied by changing the electrochemical etching mode (potentiostatic/galvanostatic). The X-ray scattering intensity maps near the InP 004 reflection are obtained. A model for scattering from such systems is proposed based on the statistical dynamical diffraction theory. Theoretical scattering maps have been fitted to the experimental ones. It is shown that a mathematical analysis of the scattering intensity maps makes it possible to determine the structural parameters of sublayers. The reconstructed parameters (thickness, strain, and porosity of sublayers and the shape and arrangement of pores) are in satisfactory agreement with the scanning electron microscopy data. The porous structures were formed by anodic oxidation of InP(001) substrates in aqueous HCl solution. The structural parameters of the sublayers were varied by changing the electrochemical etching mode (potentiostatic/galvanostatic). The X-ray scattering intensity maps near the InP 004 reflection are obtained. A model for scattering from such systems is proposed based on the statistical dynamical diffraction theory. Theoretical scattering maps have been fitted to the experimental ones. It is shown that a mathematical analysis of the scattering intensity maps makes it possible to determine the structural parameters of sublayers. The reconstructed parameters (thickness, strain, and porosity of sublayers and the shape and arrangement of pores) are in satisfactory agreement with the scanning electron microscopy data. (en)
Title	X-ray diffraction analysis of multilayer porous InP(001) structure X-ray diffraction analysis of multilayer porous InP(001) structure (en)
skos:prefLabel	X-ray diffraction analysis of multilayer porous InP(001) structure X-ray diffraction analysis of multilayer porous InP(001) structure (en)
skos:notation	RIV/67985882:_____/10:00351779!RIV11-AV0-67985882
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika	2
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Gladkov, Petr Nohavica, Dušan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	299049
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/10:00351779
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	silicon layers; INP (en)
http://linked.open.../riv/klicoveSlovo	INP silicon layers
http://linked.open...odStatuVydavatele	RU - Ruská federace
http://linked.open...ontrolniKodProRIV	[5922A19AF063]
http://linked.open...i/riv/nazevZdroje	Crystallography Reports
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	55
http://linked.open...iv/tvurceVysledku	Gladkov, Petr Nohavica, Dušan Lomov, A. A. Novikov, D. V. Vasil'ev, A. L. Kartsev, A. A. Punegov, V. I.
http://linked.open...ain/vavai/riv/wos	000276507600003
http://linked.open...n/vavai/riv/zamer	Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice
issn	1063-7745
number of pages	9 (xsd:int)

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