About: Impact of Pr on the properties of InP based layers for light sources and detectors

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 10(14) cm(-3). Three types of p-n junction based radiation detection structures were prepared and their detection performance was assessed by using alpha-particles emitted from the Am-241 radioactive source. The type Ill structure, utilizing the p-n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 10(14) cm(-3). Three types of p-n junction based radiation detection structures were prepared and their detection performance was assessed by using alpha-particles emitted from the Am-241 radioactive source. The type Ill structure, utilizing the p-n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. (en)
Title	Impact of Pr on the properties of InP based layers for light sources and detectors Impact of Pr on the properties of InP based layers for light sources and detectors (en)
skos:prefLabel	Impact of Pr on the properties of InP based layers for light sources and detectors Impact of Pr on the properties of InP based layers for light sources and detectors (en)
skos:notation	RIV/67985882:_____/09:00346171!RIV11-AV0-67985882
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z20670512)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Zavadil, Jiří Žďánský, Karel Grym, Jan Procházková, Olga Yatskiv, Roman
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	318619
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/09:00346171
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	detection; radiation (en)
http://linked.open.../riv/klicoveSlovo	detection radiation
http://linked.open...ontrolniKodProRIV	[2353095039D5]
http://linked.open...v/mistoKonaniAkce	Vilnius
http://linked.open...i/riv/mistoVydani	WEINHEIM
http://linked.open...i/riv/nazevZdroje	PHYSICA STATUS SOLIDI
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2009
http://linked.open...iv/tvurceVysledku	Grym, Jan Zavadil, Jiří Yatskiv, Roman Žďánský, Karel Procházková, Olga
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open...ain/vavai/riv/wos	000279548000048
http://linked.open.../riv/zahajeniAkce	2009-06-15 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice
issn	1610-1634
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	WILEY

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