About: LPE growth of InP layers from rare-earth treated melts for radiation detector structures

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About: LPE growth of InP layers from rare-earth treated melts for radiation detector structures Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to REs high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP layers by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors. Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to REs high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP layers by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors. (en)
Title	LPE growth of InP layers from rare-earth treated melts for radiation detector structures LPE growth of InP layers from rare-earth treated melts for radiation detector structures (en)
skos:prefLabel	LPE growth of InP layers from rare-earth treated melts for radiation detector structures LPE growth of InP layers from rare-earth treated melts for radiation detector structures (en)
skos:notation	RIV/67985882:_____/09:00341444!RIV10-AV0-67985882
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/06/0153), P(GP102/08/P617), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika	1-2
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Zavadil, Jiří Žďánský, Karel Grym, Jan Procházková, Olga
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	324217
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/09:00341444
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor technology; rare earth elements; III-V semiconductors (en)
http://linked.open.../riv/klicoveSlovo	rare earth elements semiconductor technology III-V semiconductors
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[4159BEFA65BD]
http://linked.open...i/riv/nazevZdroje	Materials Science and Engineering B-Advanced Functional Solid-State Materials
http://linked.open...in/vavai/riv/obor	JJ
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	InP Epitaxial Layers Prepared from Rare-Earth Treated Melts: Growth, Characterization, and Application in Radiation Detectors. Utilization of specific properties of rare earths in preparation of InP based radiation detector structures
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	165
http://linked.open...iv/tvurceVysledku	Grym, Jan Zavadil, Jiří Žďánský, Karel Procházková, Olga
http://linked.open...ain/vavai/riv/wos	000272777100024
http://linked.open...n/vavai/riv/zamer	Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice
issn	0921-5107
number of pages	4 (xsd:int)

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