About: Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity to shallow donors. The aim of this paper is to simulate the sometimes observed situation where the gradual gettering of donor impurity leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of experimental work. Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity to shallow donors. The aim of this paper is to simulate the sometimes observed situation where the gradual gettering of donor impurity leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of experimental work. (en)
Title	Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts (en)
skos:prefLabel	Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts (en)
skos:notation	RIV/67985882:_____/09:00341232!RIV10-AV0-67985882
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/06/0153), P(GA102/09/1037), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika	6
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Procházková, Olga Šrobár, Fedor
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	320277
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/09:00341232
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductors (en)
http://linked.open.../riv/klicoveSlovo	semiconductors
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[FD991CBBF70F]
http://linked.open...i/riv/nazevZdroje	Crystal Research and Technology
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Metallic nanolayers for semiconductor sensor and detector structures Utilization of specific properties of rare earths in preparation of InP based radiation detector structures
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	44
http://linked.open...iv/tvurceVysledku	Procházková, Olga Šrobár, Fedor
http://linked.open...ain/vavai/riv/wos	000267101200004
http://linked.open...n/vavai/riv/zamer	Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice
issn	0232-1300
number of pages	6 (xsd:int)

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