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  • Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE’s high affinity towards shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources.
  • Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE’s high affinity towards shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources. (en)
Title
  • Role of rare-earth elements in the design of radiation detectors and electroluminescent sources
  • Role of rare-earth elements in the design of radiation detectors and electroluminescent sources (en)
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  • Role of rare-earth elements in the design of radiation detectors and electroluminescent sources
  • Role of rare-earth elements in the design of radiation detectors and electroluminescent sources (en)
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  • RIV/67985882:_____/08:00346031!RIV11-AV0-67985882
http://linked.open...avai/riv/aktivita
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  • Z(AV0Z20670512)
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  • 393215
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  • RIV/67985882:_____/08:00346031
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  • semiconductor technology; rare earth elements; III-V semiconductors (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [AD5AA595CC4A]
http://linked.open...v/mistoKonaniAkce
  • Smolenice
http://linked.open...i/riv/mistoVydani
  • Piscataway, N.J
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  • ASDAM 2008
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  • Grym, Jan
  • Zavadil, Jiří
  • Žďánský, Karel
  • Procházková, Olga
http://linked.open...vavai/riv/typAkce
http://linked.open...ain/vavai/riv/wos
  • 000263223200022
http://linked.open.../riv/zahajeniAkce
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  • IEEE Operation Center
https://schema.org/isbn
  • 978-1-4244-2325-5
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