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rdf:type
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Description
| - Schottky diodes were studied by temperature dependent current–voltage, capacitance–voltage (C-V) and admitance spectra measurements. Current–voltage characteristics were fitted by considering thermionic emission, serial resistance of bulk InP and nonlinear serial resistance of the back contact of the diode. Schottky barrier height calculated from current–voltage characteristics was lower than the one calculated from C-V characteristics, which was prescribed to a strong density of surface states.
- Schottky diodes were studied by temperature dependent current–voltage, capacitance–voltage (C-V) and admitance spectra measurements. Current–voltage characteristics were fitted by considering thermionic emission, serial resistance of bulk InP and nonlinear serial resistance of the back contact of the diode. Schottky barrier height calculated from current–voltage characteristics was lower than the one calculated from C-V characteristics, which was prescribed to a strong density of surface states. (en)
- Schottkyho diody byly zkoumány měřením teplotně závislých charakteristik proud-napětí a kapacita-napětí a admitanční spektroskopií. Charakteristiky proud-napětí byly vypočteny s uvážením termiontové emise, seriového odporu objemu InP a nelineárního serivého odporu zadního kontaktu diody. Výška Schottkyho bariery vypočtená z charakteristik proud–napětí byla nižší než výška vypočtená z charakteristik kapacita-napětí, což bylo přičteno velké hustotě povrchových stavů. (cs)
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Title
| - Study of Schottky diodes made on Mn doped p-type InP
- Studium Šottkyho diod na InP dopovaném Mn (cs)
- Study of Schottky diodes made on Mn doped p-type InP (en)
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skos:prefLabel
| - Study of Schottky diodes made on Mn doped p-type InP
- Studium Šottkyho diod na InP dopovaném Mn (cs)
- Study of Schottky diodes made on Mn doped p-type InP (en)
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skos:notation
| - RIV/67985882:_____/08:00323030!RIV09-AV0-67985882
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(KAN400670651), Z(AV0Z10100520), Z(AV0Z20670512)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/67985882:_____/08:00323030
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Schottky effect; semiconductors; deep levels (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Materials Science-Materials in Electronics
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Kozak, Halina
- Žďánský, Karel
- Pekárek, Ladislav
- Sopko, B.
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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