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  • The investigation of gettering and/or doping efficiency of Yb and Yb2O3 added into the growth process of InP epitaxial layers. Layers were examined by SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The gettering was confirmed for both Yb and Yb2O3; doping effect, i.e. incorporation of Yb3+ into InP lattice was confirmed only for Yb addition. Dominant acceptor responsible for n-p conductivity conversion was identified as isoelectronic Yb impurity on the In site.
  • The investigation of gettering and/or doping efficiency of Yb and Yb2O3 added into the growth process of InP epitaxial layers. Layers were examined by SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The gettering was confirmed for both Yb and Yb2O3; doping effect, i.e. incorporation of Yb3+ into InP lattice was confirmed only for Yb addition. Dominant acceptor responsible for n-p conductivity conversion was identified as isoelectronic Yb impurity on the In site. (en)
Title
  • Influence of Yb and Yb2O3 on the properties of InP layers
  • Influence of Yb and Yb2O3 on the properties of InP layers (en)
skos:prefLabel
  • Influence of Yb and Yb2O3 on the properties of InP layers
  • Influence of Yb and Yb2O3 on the properties of InP layers (en)
skos:notation
  • RIV/67985882:_____/08:00308798!RIV11-GA0-67985882
http://linked.open...avai/riv/aktivita
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  • P(GA102/06/0153), P(GP102/08/P617), Z(AV0Z20670512)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 372362
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  • RIV/67985882:_____/08:00308798
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  • semiconductor technology; indium compounds; rare earth compounds (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [2162E9477DF5]
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  • Versailles
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  • Piscataway
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  • IPRM 2008 - Proceedings of the 20th Indium Phosphide and Related Materials Conference
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http://linked.open...cetTvurcuVysledku
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  • Grym, Jan
  • Zavadil, Jiří
  • Žďánský, Karel
  • Procházková, Olga
  • Lorinčík, Jan
http://linked.open...vavai/riv/typAkce
http://linked.open...ain/vavai/riv/wos
  • 000267695700100
http://linked.open.../riv/zahajeniAkce
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number of pages
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  • Institute of Electrical and Electronic Engineers
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  • 978-1-4244-2258-6
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